ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. ECH8695R Power MOSFET for 1-2 Cells Lithium-ion Battery Protection 24 V, 9.1 m, 11 A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells Lithium-ion Battery applications. V R (on) Max I DSS DS D Max Features 9.1 m 4.5 V Low On-Resistance 9.5 m 4.0 V 2.5 V drive 24 V 11 A 11.5 m 3.1 V Common-Drain Type 13.3 m 2.5 V ESD Diode-Protected Gate Built-in Gate Protection Resistor Pb-Free, Halogen Free and RoHS compliance ELECTRICAL CONNECTION N-Channel Typical Applications 8 76 5 1-2 cells Lithium-ion Battery Charging and Discharging Switch 1:Source1 2:Gate1 SPECIFICATIONS 3:Source2 ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 4:Gate2 5:Drain Parameter Symbol Value Unit 6:Drain Drain to Source Voltage V 24 V 7:Drain DSS 8:Drain Gate to Source Voltage V 12.5 V GSS 1234 Drain Current (DC) I 11 A D Drain Current (Pulse) I 60 DP A PW 10 s, duty cycle 1% MARKING Power Dissipation Surface mounted on ceramic substrate P 1.4 D W 2 (900 mm 0.8 mm) 1 unit US Total Dissipation Surface mounted on ceramic substrate P 1.5 W T 2 LOT No. (900 mm 0.8 mm) Junction Temperature Tj 150 C SOT-28FL / ECH8 Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should ORDERING INFORMATION not be assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information on page 5 of this data sheet. THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction to Ambient R 89.2 C/W Surface mounted on ceramic substrate JA 2 (900 mm 0.8 mm) 1 unit Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : December 2016 - Rev. 3 ECH8695R/D