Product Information

FDC3612

FDC3612 electronic component of ON Semiconductor

Datasheet
MOSFET 100V NCh PowerTrench

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.2701 ea
Line Total: USD 810.3

66930 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
66930 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

FDC3612
ON Semiconductor

3000 : USD 0.2701
9000 : USD 0.2504
24000 : USD 0.2445

2910 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 6000
Multiples : 3000

Stock Image

FDC3612
ON Semiconductor

6000 : USD 0.2653

26190 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

FDC3612
ON Semiconductor

3000 : USD 0.2463

66930 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

FDC3612
ON Semiconductor

3000 : USD 0.2472

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Product
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDC3612 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V R = 125 m V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 135 m V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for High performance trench technology for extremely low gate charge, low R and fast switching speed. DS(ON) low R DS(ON) Applications Low gate charge (14nC typ) DC/DC converter High power and current handling capability Fast switching speed S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 100 V DSS V Gate-Source Voltage 20 V GSS I Drain Current Continuous (Note 1a) 2.6 A D ed 20 Puls (Note 3) E AS Single Pulse Avalanche Energy 37 mJ P D Maximum Power Dissipation (Note 1a) 1.6 W (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W JA Thermal Resistance, Junction-to-Case (Note 1) 30 R C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .362 FDC3612 7 8mm 3000 units Publication Order Number: 2012 Semiconductor Components Industries, LLC. FDC3612/D October-2017, Rev. 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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