TSM680P06 Taiwan Semiconductor P-Channel Power MOSFET -60V, -18A, 68m FEATURES KEY PERFORMANCE PARAMETERS Improved dV/dt capability PARAMETER VALUE UNIT Fast switching V -60 V DS 100% Eas Guaranteed V = -10V 68 GS Pb-free plating R (max) m DS(on) RoHS compliant VGS = -4.5V 110 Halogen-free mold compound Q 16.4 nC g APPLICATION Motor Drive Power Tools LED Lighting TO-220 ITO-220 TO-251S (IPAK SL) TO-252 (DPAK) Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C PARAMETER SYMBOL IPAK/DPAK ITO-220 TO-220 UNIT -60 Drain-Source Voltage V V DS 20 Gate-Source Voltage V V GS -18 T = 25C C (Note 1) Continuous Drain Current I A D -11 T = 100C C (Note 2) Pulsed Drain Current I -72 A DM Total Power Dissipation T = 25C P 20 17 42 W C DTOT (Note 3) Single Pulsed Avalanche Energy E 12.8 mJ AS (Note 3) -16 Single Pulsed Avalanche Current I A AS Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL IPAK/DPAK ITO-220 TO-220 UNIT Junction to Case Thermal Resistance R C/W 6.1 7.5 3 JC Junction to Ambient Thermal Resistance R 62 C/W JA Notes: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined JA at the solder mounting surface of the drain pins. RJA is guaranteed by design while RCA is determined by the users board design. R shown below for single device operation on FR-4 PCB in still air. JA Document Number: DS P0000127 1 Version: F15 TSM680P06CI C0G TSM680P06CZ C0G Not Recommended TSM680P06 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) C PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Static Drain-Source Breakdown Voltage V = 0V, I = -250A BV -60 -- -- V GS D DSS Gate Threshold Voltage V = V , I = -250A V DS GS D GS(TH) -1.2 -1.6 -2.2 V Gate Body Leakage V = 20V, V = 0V I -- -- 100 GS DS GSS nA V = -60V, V = 0V -- -- -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -48V, T = 125 C -- -- -10 DS C V = -10V, I = -6A -- 54 68 GS D Drain-Source On-State Resistance R m DS(on) V = -4.5V, I = -3A -- 72 110 GS D V = -10V, I = -6A g Forward Transconductance DS D fs -- 8.5 -- S (Note 5) Dynamic Total Gate Charge Q -- -- 16.4 g V = -30V, I = -6A, DS D Gate-Source Charge Q -- -- 2.8 nC gs V = -10V GS Gate-Drain Charge Q -- -- 3.6 gd Input Capacitance C -- 870 -- iss V = -30V, V = 0V, DS GS pF Output Capacitance C -- -- oss 70 f = 1.0MHz Reverse Transfer Capacitance C -- -- rss 42 Gate Resistance F = 1MHz, open drain R -- 16 -- g (Note 6) Switching Turn-On Delay Time t -- -- 8.3 d(on) V = -30V, DD Turn-On Rise Time t -- 29.6 -- r R = 6, ns GEN Turn-Off Delay Time t -- -- d(off) 51.7 I = -1A D Turn-Off Fall Time t -- -- f 15.6 (Note 3) Source-Drain Diode Forward On Voltage -- -- -1 V I = -1A, V = 0V V S GS SD Reverse Recovery Time -- 20 -- ns I =1A t rr S dI /dt = 100A/s Reverse Recovery Charge -- 10 -- nC F Q rr Maximum Continuous Forward I -- -- -13 A Integral reverse diode S Current in the MOSFET Maximum Pulse Forward Current I -- -- -52 A SM Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature o 3. L = 0.1mH, I = -16A, V = -25V, R = 25, Starting T = 25 C AS DD G J 4. Pulse test: PW 300s, duty cycle 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. Document Number: DS P0000127 2 Version: F15 TSM680P06CI C0G TSM680P06CZ C0G Not Recommended