LOTNo. LOTNo. SCH1435 Power MOSFET 30V, 89m , 3A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to www.onsemi.com minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features Low On-Resistance V R (on) Max I DSS DS D Max 1.8V drive 89m 4.5V ESD Diode-Protected Gate 30V 126m 2.5V 3A Pb-Free, Halogen Free and RoHS compliance 195m 1.8V Ultra small package SCH6 (1.6mm1.6mm0.56mmt) ELECTRICAL CONNECTION Typical Applications N-Channel Load Switch 1,2,5,6 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 1:Drain Parameter SymbolValue Unit 2:Drain Drain to Source Voltage V 30V 3 3:Gate DSS 4:Source Gate to Source Voltage V 12 V GSS 5:Drain Drain Current (DC) I 3A 6:Drain D 4 Drain Current (Pulse) I 12 A DP PW 10s, duty cycle 1% Power Dissipation PACKING TYPE : TL MARKING When mounted on ceramic substrate P 0.8 W D 2 (900mm 0.8mm) Junction Temperature Tj 150 C ZL Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage TL the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL RESISTANCE RATINGS See detailed ordering and shipping information on page 5 of this data sheet. Parameter SymbolValue Unit Junction to Ambient R 156.2 C/W When mounted on ceramic substrate JA 2 (900mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : August 2015 - Rev. 2 SCH1435/D SCH1435 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 30 V BR DSS D GS Zero-Gate Voltage Drain Current I V =30V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I=1mA 0.4 1.3V GS DS D Forward Transconductance g V =10V, I=1.5A 2.7 S FS DS D R (on)1 I =1.5A, V=4.5V 68 89m DS D GS Static Drain to Source On-State 90 126 R (on)2 I =0.75A, V =2.5V m DS D GS Resistance R (on)3 I =0.3A, V =1.8V 130 195 m DS D GS Input Capacitance Ciss 265 pF Output Capacitance Coss 35 pF V =10V, f=1MHz DS Reverse Transfer Capacitance Crss 28 pF Turn-ON Delay Time t (on) 5.1 ns d Rise Time t 10 ns r See specified Test Circuit Turn-OFF Delay Time 137 ns t (off) d Fall Time 36 ns t f Total Gate Charge Qg 3.5 nC Gate to Source Charge Qgs 0.57 nC V =15V, V =4.5V, I =3A DS GS D Gate to Drain Miller Charge Qgd 0.93 nC Forward Diode Voltage V SD I =3A, V=0V 0.87 1.2V S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =15V DD IN 4.5V 0V I =1.5A D V IN R =10 L V D OUT PW=10s D.C.1% G SCH1435 P.G 50 S www.onsemi.com 2