ESD Protection Diode Array Low Capacitance ESD Protection Diode for High Speed Data Line ESD1014 The ESD1014 surge protectionis designed to protect high speed data lines from ESD, EFT, and lightning. www.onsemi.com Features Low Capacitance (6 pF Maximum Between I/O Lines and GND) LOW CAPACITANCE ESD Rating of Class 3B (Exceeding 8 kV) per Human Body model DIODE SURGE PROTECTION and Class C (Exceeding 400 V) per Machine Model ARRAY Protection for the Following IEC Standards: IEC 6100042 (ESD) Level 4 30 kV (Contact) PIN CONFIGURATION SZ Prefix for Automotive and Other Applications Requiring Unique AND SCHEMATIC Site and Control Change Requirements AECQ101 Qualified and GND (Bottom pad) PPAP Capable This is a PbFree Device I/O 1 10 N/C Typical Applications N/C 2 9 I/O High Speed Communication Line Protection I/O 3 8 N/C N/C 4 USB 1.1 and 2.0 Power and Data Line Protection 7 I/O VP 5 Digital Video Interface (DVI) 6 N/C Monitors and Flat Panel Displays T1/E1 and T3/E3 10/100/1000 Ethernet Protection MARKING Gigabit Ethernet Protection DIAGRAM 1014 MAXIMUM RATINGS (T = 25C unless otherwise noted) UDFN10 J AYW CASE 517AN Rating Symbol Value Unit Peak Power Dissipation (Note 1) P 450 W 1014 = Specific Device Code pk A = Assembly Location Maximum Peak Pulse Current I 30 A PP Y = Year (Note 1) W = Work Week Operating Junction Temperature Range T 40 to +125 C = PbFree Package J Storage Temperature Range T 55 to +150 C stg Lead Solder Temperature T 260 C L ORDERING INFORMATION Maximum (10 Seconds) Device Package Shipping Machine Model (MM) ESD 0.4 kV Human Body Model (HBM) 16 ESD1014MUTAG UDFN10 3000 / Tape & IEC 6100042 Contact (ESD) 30 (PbFree) Reel Stresses exceeding those listed in the Maximum Ratings table may damage the SZESD1014MUTAG UDFN10 3000 / Tape & device. If any of these limits are exceeded, device functionality should not be (PbFree) Reel assumed, damage may occur and reliability may be affected. 1. 8/20 s Waveform per Figure 2 ( T = 25C). A For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: July, 2020 Rev. 8 ESD1014/DESD1014 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V (Note 1) 3.3 V RWM Breakdown Voltage V I =1 mA, (Note 2) 5.0 5.3 V BR T Reverse Leakage Current I V = 3.3 V 5.0 A R RWM Clamping Voltage V Pin 5 to GND, I = 1 A 6.2 V C PP Clamping Voltage V Any I/O pin to GND V C I = 1 A 7.5 PP I = 10 A 9.0 PP I = 25 A 11 PP Maximum Peak Pulse Current I 8/20 s Waveform per Figure 2 30 A PP Junction Capacitance C V = 0 V, f=1 MHz between I/O Pins and GND 3.8 5.0 pF J R V = 0 V, f=1 MHz between I/O Pins 1.5 3.0 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 2. V is measured at pulse test current I . BR T TYPICAL PERFORMANCE CURVES (T = 25C unless otherwise noted) J 100 100 t PEAK VALUE I 8 s r RSM 90 90 PULSE WIDTH (t ) IS DEFINED P 80 80 AS THAT POINT WHERE THE 70 70 PEAK CURRENT DECAY = 8 s 60 60 HALF VALUE I /2 20 s RSM 50 50 40 40 30 30 t P 20 20 10 10 0 0 0 25 50 75 100 125 150 175 200 020 40 60 80 T , AMBIENT TEMPERATURE (C) t, TIME ( s) A Figure 1. Pulse Derating Curve Figure 2. 8/20 s Pulse Waveform 30 25 I/OI/O 20 15 I/OGND 10 5 0 0 5 10 15 20 25 30 I , PEAK CURRENT (A) PP Figure 3. Clamping Voltage, 8/20 s Waveform www.onsemi.com 2 PEAK POWER DISSIPATION (%) V , CLAMPING VOLTAGE (V) C % OF PEAK PULSE CURRENT