ESD11L5.0DT5G ESD Protection Diode UltraLow Capacitance The ESD11L5.0DT5G is designed to protect voltage sensitive components from damage due to ESD in applications that require ultra low capacitance to preserve signal integrity. Excellent clamping www.onsemi.com capability, low leakage and fast response time are combined with an ultra low diode capacitance of 0.5 pF to provide best in class protection from IC damage due to ESD. The ultra small SOT1123 1 package is ideal for designs where board space is at a premium. The PIN 1. CATHODE 3 2. CATHODE ESD11L5.0DT5G can be used to protect two unidirectional lines or 3. ANODE 2 one bidirectional line. When used to protect one bidirectional line, the effective capacitance is 0.25 pF. Because of its low capacitance, it is well suited for protecting high frequency signal lines such as USB2.0 high speed and antenna line applications. Specification Features: Low Capacitance 0.5 pF Typical SOT1123 Low Clamping Voltage CASE 524AA Small Body Outline Dimensions: 0.039 x 0.024 (1.0 mm x 0.6 mm) Low Body Height: 0.015 (0.37 mm) Standoff Voltage: 5 V MARKING DIAGRAM Low Leakage Response Time is Typically < 1.0 ns IEC6100042 Level 4 ESD Protection 6 M AECQ101 Qualified and PPAP Capable This is a PbFree Device 6 = Specific Device Code Mechanical Characteristics: M = Date Code CASE: Void-free, transfer-molded, thermosetting plastic Epoxy Meets UL 94 V0 LEAD FINISH: 100% Matte Sn (Tin) ORDERING INFORMATION QUALIFIED MAX REFLOW TEMPERATURE: 260C Device Meets MSL 1 Requirements Device Package Shipping Table 1. MAXIMUM RATINGS ESD11L5.0DT5G SOT1123 8000/Tape & Reel (PbFree) Rating Symbol Value Unit For information on tape and reel specifications, IEC 6100042 (ESD) Contact 10 kV including part orientation and tape sizes, please Total Power Dissipation on FR5 Board P 150 mW D refer to our Tape and Reel Packaging Specifications (Note 1) T = 25C A Brochure, BRD8011/D. Storage Temperature Range T 55 to +150 C stg Junction Temperature Range T 55 to +125 C J DEVICE MARKING INFORMATION Lead Solder Temperature Maximum T 260 C L See specific marking information in the device marking (10 Second Duration) column of the Electrical Characteristics tables starting on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: October, 2017 Rev. 4 ESD11L5.0D/DESD11L5.0DT5G Table 2. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A I Symbol Parameter I F I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM I Maximum Reverse Leakage Current V V R RWM I V R F I T V Breakdown Voltage I BR T I Test Current T I Forward Current F I PP V Forward Voltage I F F P Peak Power Dissipation pk UniDirectional C Capacitance V = 0 V and f = 1.0 MHz R *See Application Note AND8308/D for detailed explanations of datasheet parameters. Table 3. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 1.1 V Max. I = 10 mA for all types) A F F V (V) C (pF), C (pF), BR V I ( A) I unidirectional bidirectional RWM R T (V) V (Note 2) (Note 3) (Note 4) I V RWM T C Per IEC6100042 Device Max Max Min mA Typ Max Typ Max (Note 6) Marking Device ESD11L5.0DT5G 6 5.0 1.0 5.4 1.0 0.5 0.9 0.25 0.45 Figures 1 and 2 2. V is measured with a pulse test current I at an ambient temperature of 25C. BR T 3. Unidirectional capacitance at f = 1 MHz, V = 0 V, T = 25C (pin1 to pin 3 pin 2 to pin 3). R A 4. Bidirectional capacitance at f = 1 MHz, V = 0 V, T = 25C (pin1 to pin 2). R A 5. Surge current waveform per Figure 5. 6. Typical waveform. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 2. ESD Clamping Voltage Screenshot Figure 1. ESD Clamping Voltage Screenshot Negative 8 kV contact per IEC 6100042 Positive 8 kV contact per IEC 6100042 www.onsemi.com 2