ESD7501 ESD Protection Diode MicroPackaged Diodes for ESD Protection The ESD7501 is designed to protect voltage sensitive components that require low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast www.onsemi.com response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, the part is well suited for use in high frequency designs such as USB 2.0 1 2 high speed applications. Cathode Anode Features Low Capacitance 0.45 pF (Typ) MARKING Low Clamping Voltage DIAGRAM Small Body Outline Dimensions: 0.60 mm x 0.30 mm PIN 1 Low Body Height: 0.3 mm X3DFN2 Standoff Voltage: 5 V M CASE 152AF IEC6100042 Level 4 ESD Protection These Devices are PbFree, Halogen Free/BFR Free and are RoHS V = Specific Device Code Compliant M = Date Code Typical Applications USB 2.0/3.0 ORDERING INFORMATION MHL 2.0 Device Package Shipping eSATA ESD7501MUT5G X3DFN2 15000 / Tape & (PbFree) Reel MAXIMUM RATINGS For information on tape and reel specifications, Rating Symbol Value Unit including part orientation and tape sizes, please IEC 6100042 (ESD) Contact 16 kV refer to our Tape and Reel Packaging Specifications Air 16 Brochure, BRD8011/D. Total Power Dissipation on FR5 Board P 250 mW D (Note 1) T = 25C A Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: November, 2017 Rev. 1 ESD7501/D VESD7501 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 5.0 V RWM Breakdown Voltage (Note 2) V I = 1 mA 5.5 V BR T Reverse Leakage Current I V = 5 V 1.0 A R RWM Clamping Voltage 8x20 s V I = 0.5 A 8.4 8.9 V C PP V I = 1.0 A 9 9.5 V Clamping Voltage 8x20 s C PP Clamping Voltage (Note 3) V I = 2 A 11.5 V C PP ESD Clamping Voltage V Per IEC6100042 See Figures 1 and 2 C Junction Capacitance C V = 0 V, f = 1 MHz 0.45 0.75 pF J R Dynamic Resistance R TLP Pulse Pin 1 to Pin 2 0.28 DYN Pin 2 to Pin 1 0.42 Insertion Loss f = 1 GHz 0.08 dB f = 5 GHz 0.55 f = 10 GHz 1.77 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 3. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A 160 20 140 0 120 100 20 80 40 60 60 40 20 80 0 20 100 25 0 25 50 75 100 125 150 25 0 25 50 75 100 125 150 TIME (ns) TIME (ns) Figure 1. IEC6100042 + 8 kV Contact ESD Figure 2. IEC6100042 8 kV Contact ESD Clamping Voltage Clamping Voltage www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)