FCA20N60 N-Channel SuperFET MOSFET August 2014 FCA20N60 N-Channel SuperFET MOSFET 600 V, 20 A, 190 m Features Description SuperFET MOSFET is Fairchild Semiconductors first genera- 650V T = 150C J tion of high voltage super-junction (SJ) MOSFET family that is Typ. R = 150 m DS(on) utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Q = 75 nC ) g resistance and lower gate charge performance. This technology Low Effective Output Capacitance (Typ. C = 165 pF ) oss(eff.) is tailored to minimize conduction loss, provide superior switch- 100% Avalanche Tested ing performance, dv/dt rate and higher avalanche energy. Con- sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD Applications TV power, ATX power and industrial power applications. Solar Inverter AC-DC Power Supply D G G D TO-3PN S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C FCA20N60 / Symbol Parameter Unit FCA20N60 F109 V Drain to Source Voltage 600 V DSS V Gate-Soure voltage 30 V GSS o - Continuous (T = 25 C) 20 C I Drain Current A D o - Continuous (T = 100 C) 12.5 C I Drain Current - Pulsed (Note 1) 60 A DM E Single Pulsed Avalanche Energy (Note 2) 690 mJ AS I Avalanche Current (Note 1) 20 A AR E Repetitive Avalanche Energy (Note 1) 20.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 208 W C P Power Dissipation D o o - Derate Above 25C1.67W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Thermal Characteristics FCA20N60 / Symbol Parameter Unit FCA20N60 F109 R Thermal Resistance, Junction to Case, Max. 0.6 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 41.7 JA 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCA20N60 Rev. C0 FCA20N60 N-Channel SuperFET MOSFET Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCA20N60 FCA20N60 TO-3PN Tube N/A N/A 30 units FCA20N60 F109 FCA20N60 TO-3PN Tube N/A N/A 30 units o Electrical Characteristics T = 25 C unless otherwise noted. C Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics o I = 250 A, V = 0 V, T = 25 C 600 - - V D GS J BV Drain to Source Breakdown Voltage DSS o I = 250 A, V = 0 V, T = 150C- 650 - V D GS J BV Breakdown Voltage Temperature DSS o o I = 250 A, Referenced to 25C- 0.6 - V/ C D / T Coefficient J Drain-Source Avalanche Breakdown BV V = 0 V, I = 20 A - 700 - V DS GS D Voltage V = 600 V, V = 0 V - - 1 DS GS I Zero Gate Voltage Drain Current A DSS o V = 480 V, T = 125C- -10 DS C I Gate to Body Leakage Current V = 30 V, V = 0 V - - 100 nA GSS GS DS On Characteristics V Gate Threshold Voltage V = V , I = 250 A3.0-5.0V GS(th) GS DS D R Static Drain to Source On Resistance V = 10 V, I = 10 A - 0.15 0.19 DS(on) GS D g Forward Transconductance V = 40 V, I = 10 A - 17 - S FS DS D Dynamic Characteristics C Input Capacitance - 2370 3080 pF iss V = 25 V, V = 0 V, DS GS C Output Capacitance - 1280 1665 pF oss f = 1 MHz C Reverse Transfer Capacitance - 95 - pF rss C Output Capacitance V = 480 V, V = 0 V, f = 1 MHz - 65 85 pF oss DS GS C Effective Output Capacitance V = 0 V to 400 V, V = 0 V - 165 - pF oss(eff.) DS GS Q Total Gate Charge at 10V -75 98 nC g V = 480 V, I = 20 A, DS D Q Gate to Source Gate Charge - 13.5 18 nC V = 10 V gs GS (Note 4) Q Gate to Drain Miller Charge - 36 - nC gd Switching Characteristics t Turn-On Delay Time - 62 135 ns d(on) t Turn-On Rise Time - 140 290 ns V = 300 V, I = 20 A, r DD D V = 10 V, R = 25 t Turn-Off Delay Time - 230 470 ns GS G d(off) (Note 4) t Turn-Off Fall Time - 65 140 ns f Drain-Source Diode Characteristics I Maximum Continuous Drain to Source Diode Forward Current - - 20 A S I Maximum Pulsed Drain to Source Diode Forward Current - - 60 A SM V Drain to Source Diode Forward Voltage V = 0 V, I = 20 A - - 1.4 V SD GS SD t Reverse Recovery Time - 530 - ns V = 0 V, I = 20 A, rr GS SD dI /dt = 100 A/s Q Reverse Recovery Charge - 10.5 - C F rr Notes: 1: Repetitive rating: pulse-width limited by maximum junction temperature. 2: I = 10 A, V = 50 V, R = 25 , starting T = 25C. AS DD G J 3: I 20 A, di/dt 200 A/s, V BV , starting T = 25C. SD DD DSS J 4: Essentially independent of operating temperature typical characteristics. 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 2 FCA20N60 Rev. C0