MOSFET N-Channel, SUPERFET II, FRFET 650 V, 20.6 A, 190 m FCH190N65F Description SUPERFET II MOSFET is ON Semiconductors brandnew high www.onsemi.com voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize V R MAX I MAX DS DS(ON) D conduction loss, provide superior switching performance, dv/dt rate 650 V 190 m 10 V 20.6 A and higher avalanche energy. Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial D power applications. SUPERFET II FRFET MOSFETs optimized body diode reverse recovery performance can remove additional component and improve system reliability. Features G 700 V T = 150C J Typ. R = 168 m (Typ.) DS(on)) S Ultra Low Gate Charge (Typ. Q = 60 nC) g N-CHANNEL MOSFET Low Effective Output Capacitance (Typ. C = 304 pF) oss(eff.) 100% Avalanche Tested S This Device is PbFree and is RoHS Compliant D GG Applications LCD / LED / PDP TV Solar Inverter Telecom, Server Power Supplies TO2473LD ACDC Power Supply CASE 340CH MARKING DIAGRAM Y&Z&3&K FCH 190N65F Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCH190N65F = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: October, 2020 Rev. 4 FCH190N65F/DFCH190N65F ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FCH190N65FF155 Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 20 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 20.6 A D C Continuous (T = 100C) 13.1 C I Drain Current Pulsed (Note 1) 61.8 A DM E Single Pulsed Avalanche Energy (Note 2) 400 mJ AS I Avalanche Current (Note 1) 4.0 A AR E Repetitive Avalanche Energy (Note 1) 2.1 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 P Power Dissipation (T = 25C) 208 W D C Derate Above 25C 1.67 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. I = 4 A, R = 25 , Starting T = 25C AS G J 3. I 10 A, di/dt 200 A/ s, V 380 V, Starting T = 25 C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter FCH190N65FF155 Unit R Thermal Resistance, Junction to Case, Max. 0.6 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCH190N65FF155 FCH190N65F TO2473LD Tube N/A N/A 30 Units www.onsemi.com 2