FCH47N60N ON Semiconductor

FCH47N60N electronic component of ON Semiconductor
FCH47N60N ON Semiconductor
FCH47N60N MOSFETs
FCH47N60N  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FCH47N60N MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCH47N60N MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. FCH47N60N
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 600V N-Chan MOSFET SupreMOS
Datasheet: FCH47N60N Datasheet (PDF)
Price (USD)
38: USD 12.4063 ea
Line Total: USD 471.44 
Availability : 474
  
Ship by Fri. 24 Oct to Thu. 30 Oct
QtyUnit Price
38$ 12.4063
100$ 11.7813
500$ 11.1719
1000$ 10.5469
10000$ 9.9219

Availability 474
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 38
Multiples : 1
QtyUnit Price
38$ 12.4063
100$ 11.7813
500$ 11.1719
1000$ 10.5469
10000$ 9.9219


Availability 145
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 38
Multiples : 1
QtyUnit Price
38$ 12.4063
100$ 11.7813
500$ 11.1719
1000$ 10.5469
10000$ 9.9219


Availability 824
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 38
Multiples : 1
QtyUnit Price
38$ 12.4063
100$ 11.7813
500$ 11.1719
1000$ 10.5469
10000$ 9.9219

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FCH47N60N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCH47N60N and other electronic components in the MOSFETs category and beyond.

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MOSFET N-Channel, SUPREMOS 600 V, 47 A, 62 m FCH47N60N Description www.onsemi.com The SUPREMOS MOSFET is ON Semiconductors next generation of high voltage superjunction (SJ) technology employing a deep trench filling process that differentiates it from the V R MAX I MAX conventional SJ MOSFETs. This advanced technology and precise DS DS(ON) D process control provides lowest Rsp onresistance, superior switching 600 V 62 m 10 V 47 A performance and ruggedness. SUPREMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, D server/telecom power, FPD TV power, ATX power, and industrial power applications. Features 650 V T = 150C J G R = 51.5 m (Typ.) V = 10 V, I = 23.5 A DS(on) GS D Ultra Low Gate Charge (Typ. Q = 115 nC) g Low Effective Output Capacitance (Typ. C = 511 pF) S oss(eff.) 100% Avalanche Tested N-CHANNEL MOSFET This Device is PbFree and is RoHS Compliant Applications Solar Inverter G ACDC Power Supply D S TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FCH 47N60N Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCH47N60N = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: April, 2021 Rev. 3 FCH47N60N/DFCH47N60N ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 30 V GSS I Drain Current A Continuous (T = 25C) 47 D C Continuous (T = 100C) 29.7 C I Drain Current Pulsed (Note 1) 141 A DM E Single Pulsed Avalanche Energy (Note 2) 3068 mJ AS I Avalanche Current (Note 1) 15.7 A AR E Repetitive Avalanche Energy (Note 1) 3.7 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 368 W D C Derate above 25C 2.94 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Second 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. I = 15.7 A, R = 25 , starting T = 25 C AS G J 3. I 47 A, di/dt 200 A/ s, V 380 V, starting T = 25 C SD DD J PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Package Method Reel Size Tape Width Quantity FCH47N60N FCH47N60N TO2473LD Tube N/A N/A 30 Units THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.34 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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