MOSFET N-Channel 600 V, 47 A, 79 m FCH47N60-F085 Description SUPERFET is ON Semiconductors proprietary new generation ofhigh voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low onresistance and lower gate charge www.onsemi.com performance. This advanced technology has been tailored to minimize conduction V R MAX I MAX DSS DS(ON) D loss, provide superior switching performance, and withstand extreme 600 V 47 A dv/dt rate and higher avalanche energy. 79 m Consequently, SUPERFET is suitable for various automotive DC/DC power conversion. D Features Typical r = 64 m at V = 10 V, I = 47 A DS(on) GS D Typical Q = 187 nC at V = 10 V, I = 47 A g(tot) GS D UIS Capability G Qualified to AEC Q101 and PPAP Capable This Device is PbFree and is RoHS Compliant S Applications N-Channel MOSFET Automotive On Board Charger Automotive DC/DC Converter for HEV G D S TO247 CASE 340CK MARKING DIAGRAM Y&Z&3&K FCH 47N60 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot Code FCH47N60 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: December, 2020 Rev. 4 FCH47N60F085/DFCH47N60 F085 MAXIMUM RATINGS (T = 25C, unless otherwise specified) C Symbol Parameter Ratings Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 30 V GS I A Drain Current Continuous (V = 10) (Note 1) T = 25C 47 D GS C Pulsed Drain Current T = 25C See Fig. 4 C E Single Pulsed Avalanche Rating (Note 2) 810 mJ AS P Power Dissipation 417 W D Derate above 25C 3.3 W/C T , T Operating and Storage Temperature 55 to +150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting T = 25C, L = 5 mH, I = 18 A, V = 100 V during inductor charging and V = 0 V during time in avalanche. J AS DD DD 3. R is the sum of the junctiontocase and casetoambient thermal resistance, where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design, while R is determined by the board design. The maximum rating JC JA 2 presented here is based on mounting on a 1 in pad of 2oz copper. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Thermal Resistance Junction to Case 0.3 C/W JC R Maximum Thermal Resistance Junction to Ambient (Note 3) 50 JA PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Reel Size Tape Width Quantity FCH47N60F085 FCH47N60 TO2473LD 30 Units www.onsemi.com 2