STH160N4LF6-2 STMicroelectronics

STH160N4LF6-2 N-channel 40 V, 0.0018 m typ., 120 A, STripFET VI DeepGATE Power MOSFET in a HPAK-2 package Datasheet - production data Features Order code V R max I P DS DS(on) D TOT STH160N4LF6-2 40 V 0.0022 120 A 150 W TAB R * Q industry benchmark DS(on) g Extremely low on-resistance R 2 DS(on) 3 1 Logic level drive 2 H PAK-2 High avalanche ruggedness 100% avalanche tested Applications Switching applications Figure 1. Internal schematic diagram % 7 Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. * DS(on) 6 0 Y Table 1. Device summary Order code Marking Package Packaging 2 STH160N4LF6-2 160N4LF6 Tape and reel H PAK-2 April 2014 DocID026265 Rev 1 1/17 This is information on a product in full production. www.st.comContents STH160N4LF6-2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data 10 5 Packaging mechanical data 14 6 Revision history . 16 2/17 DocID026265 Rev 1