FCHD190N65S3R0 MOSFET Power, N-Channel, SUPERFET III, Easy Drive, 650 V, 17 A, 190 m Description SUPERFET III MOSFET is ON Semiconductors brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate V R MAX I MAX DSS DS(ON) D charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and 650 V 190 m 10 V 17 A withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier D design implementation. Features 700 V T = 150C J G Typ. R = 159 m DS(on) Ultra Low Gate Charge (Typ. Q = 33 nC) g S Low Effective Output Capacitance (Typ. C = 300 pF) oss(eff.) POWER MOSFET 100% Avalanche Tested These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Applications Computing / Display Power Supplies G Telecom / Server Power Supplies D S Industrial Power Supplies TO247AD CASE 340AL Lighting / Charger / Adapter MARKING DIAGRAM FCHD190 N65S3R0 AYWWG FCHD190N65S3R0 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: July, 2019 Rev. 2 FCHD190N65S3R0/DFCHD190N65S3R0 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 V I Drain Current Continuous (T = 25C) 17 A D C Continuous (T = 100C) 11 C I Drain Current Pulsed (Note 1) 42.5 A DM E Single Pulsed Avalanche Energy (Note 2) 76 mJ AS I Avalanche Current (Note 1) 2.5 A AS E Repetitive Avalanche Energy (Note 1) 1.44 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 144 W D C Derate Above 25C 1.15 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 s 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I = 2.5 A, R = 25 , starting T = 25C. AS G J 3. I 8.5 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.87 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCHD190N65S3R0F155 FCHD190N65S3R0 TO247AD Tube N/A N/A 30 Units www.onsemi.com 2