Product Information

FCMT180N65S3

FCMT180N65S3 electronic component of ON Semiconductor

Datasheet
MOSFET SUPERFET3 650V 17A 180 mOhm

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.45 ea
Line Total: USD 3.45

2542 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

FCMT180N65S3
ON Semiconductor

1 : USD 3.107
10 : USD 3.0797
25 : USD 3.0537
100 : USD 3.0277
250 : USD 3.0017
500 : USD 2.9417
1000 : USD 2.9417
3000 : USD 2.9417

2542 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

FCMT180N65S3
ON Semiconductor

1 : USD 3.45
10 : USD 3.1855
25 : USD 3.1395
100 : USD 2.9325
250 : USD 2.921
500 : USD 2.7715
1000 : USD 2.7025
3000 : USD 2.576
6000 : USD 2.5645

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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FCMT180N65S3 with MOSFET SUPERFET3 650V 17A 180 mOhm is a three-terminal device manufactured by ON Semiconductor. It is a N-Channel MOSFET with a high-voltage capability of up to 650V and a current rating of 17A. The device has a low on-resistance of 180 mOhm at 10V, normally making it ideal for efficient switching of power. It is also an advanced double-diffused MOSFET (D-MOSFET) which is optimized for high-speed switching applications. The device is housed in the TO-220 SuperFET 3 package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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