FCP125N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 m Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductors brand new high voltage superjunction (SJ) MOSFET family that is utilizing charge V R MAX I MAX DSS DS(ON) D balance technology for outstanding low onresistance and lower gate 650 V 125 m 10 V 24 A charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. D Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features 700 V T = 150C G J Typ. R = 105 m DS(on) Ultra Low Gate Charge (Typ. Q = 46 nC) g S Low Effective Output Capacitance (Typ. C = 439 pF) oss(eff.) POWER MOSFET 100% Avalanche Tested These Devices are PbFree and are RoHS Compliant Applications Telecom / Server Power Supplies G D Industrial Power Supplies S UPS / Solar TO220 CASE 340AT MARKING DIAGRAM Y&Z&3&K FCP 125N65S3 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCP125N65S3 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2019 Rev. 4 FCP125N65S3/DFCP125N65S3 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 24 A D C Continuous (T = 100C) 15 C I Drain Current Pulsed (Note 1) 60 A DM E Single Pulsed Avalanche Energy (Note 2) 115 mJ AS I Avalanche Current (Note 2) 3.7 A AS E Repetitive Avalanche Energy (Note 1) 1.81 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 181 W D C Derate Above 25C 1.45 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 3.7 A, R = 25 , starting T = 25C. AS G J 3. I 12 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.69 C/W JC R Thermal Resistance, Junction to Ambient, Max. 62.5 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCP125N65S3 FCP125N65S3 TO220 Tube N/A N/A 50 Units www.onsemi.com 2