FCU900N60Z MOSFET, N-Channel, SuperFET II 600 V, 4.5 A, 900 m www.onsemi.com Description SuperFET II MOSFET is ON Semiconductors brandnew high voltage superjunction (SJ) MOSFET family that is utilizing charge D balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, G server/telecom power, FPD TV power, ATX power and industrial power applications. Features S 675 V T = 150C J NChannel Typ. R = 820 m DS(on) Ultra Low Gate Charge (Typ. Q = 13 nC) g Low Effective Output Capacitance (Typ. C = 48.6 pF) oss(eff.) 100% Avalanche Tested G D ESD Improved Capacity S RoHS Compliant DPAK3 CASE 369AP Applications LCD/LED/PDP TV and Monitor Lighting MARKING DIAGRAM Solar Inverter Charger Y&Z&3&K FCU 900N60Z Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCU900N60Z = Specific Device Code ORDERING INFORMATION Device Top Mark Package Shipping FCU900N60Z FCU900N60Z DPAK3 70 Units/ Tube Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: April, 2019 Rev. 4 FCU900N60Z/DFCU900N60Z ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage DC 20 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 4.5 A D C Continuous (T = 100C) 2.8 C I Drain Current Pulsed (Note 1) 13.5 A DM E Single Pulsed Avalanche Energy (Note 2) 47.5 mJ AS I Avalanche Current (Note 1) 1 A AR E Repetitive Avalanche Energy (Note 1) 0.52 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 52 W D C Derate above 25C 0.42 W/C T T Operating and Storage Temperature Range 55 to +150 C J, STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 1.0 A, V = 50 V, R = 25 , starting T = 25C. AS DD G J 3. I 2.3 A, di/dt 200 A/ s, V BV , starting T = 25C. SD DD DSS J THERMAL CHARACTERISTICS Symbol Parameter Value Unit Thermal Resistance, Junction to Case, Max. 2.4 C/W R JC R Thermal Resistance, Junction to Ambient, Max. 100 JA www.onsemi.com 2