TM
FDA16N50LDTU N-Channel UniFET MOSFET
August 2014
FDA16N50LDTU
TM
N-Channel UniFET MOSFET
500 V, 16.5 A, 380 m
Features Description
TM
R = 310 m (Typ.) @ V = 10 V, I = 8.3 A UniFET MOSFET is Fairchild Semiconductors high voltage
DS(on) GS D
MOSFET family based on planar stripe and DMOS technology.
Low Gate Charge (Typ. 32 nC)
This MOSFET is tailored to reduce on-state resistance, and to
Low C (Typ. 20 pF)
rss
provide better switching performance and higher avalanche
100% Avalanche Tested
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
RoHS Compliant
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
Applications
PDP TV
Uninterruptible Power Supply
D
G
G
D
S
TO-3PN
(L-forming)
S
o
MOSFET Maximum Ratings T = 25 C unless otherwise noted.
C
Symbol Parameter FDA16N50LDTU Unit
V Drain to Source Voltage 500 V
DSS
V Gate to Source Voltage 30 V
GSS
o
- Continuous (T = 25 C) 16.5
C
I Drain Current A
D
o
- Continuous (T = 100 C) 9.9
C
I Drain Current - Pulsed (Note 1) 66 A
DM
E Single Pulsed Avalanche Energy (Note 2) 780 mJ
AS
I Avalanche Current (Note 1) 16.5 A
AR
E Repetitive Avalanche Energy (Note 1) 20.5 mJ
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
o
(T = 25 C) 205 W
C
P Power Dissipation
D
o o
- Derate Above 25C2.1W/ C
o
T , T Operating and Storage Temperature Range -55 to +150 C
J STG
o
T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C
L
Thermal Characteristics
Symbol Parameter FDA16N50LDTU Unit
R Thermal Resistance, Junction to Case, Max. 0.6
JC
o
C/W
R Thermal Resistance, Junction to Ambient, Max. 40
JA
2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
1
FDA16N50LDTU Rev. C0TM
FDA16N50LDTU N-Channel UniFET MOSFET
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
TO-3PN
FDA16N50 Tube N/A N/A 30 units
FDA16N50LDTU (L-forming)
o
Electrical Characteristics T = 25 C unless otherwise noted.
C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
o
BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V, T = 25 C 500 - - V
DSS D GS J
BV Breakdown Voltage Temperature
DSS o o
I = 250 A, Referenced to 25 C - 0.50 - V/ C
D
/ T Coefficient
J
V = 500 V, V = 0 V - - 20
DS GS
I Zero Gate Voltage Drain Current A
DSS
o
V = 500 V, T = 125 C - - 200
DS C
I Gate to Body Leakage Current V = 30 V, V = 0 V - - 100 nA
GSS GS DS
On Characteristics
V Gate Threshold Voltage V = V , I = 250 A3.0-5.0V
GS(th) GS DS D
R Static Drain to Source On Resistance V = 10 V, I = 8.3 A - 0.31 0.38
DS(on) GS D
g Forward Transconductance V = 40 V, I = 8.3 A - 23 - S
FS DS D
Dynamic Characteristics
C Input Capacitance - 1495 1945 pF
iss
V = 25 V, V = 0 V,
DS GS
C Output Capacitance - 235 310 pF
oss
f = 1 MHz
C Reverse Transfer Capacitance - 20 30 pF
rss
Q Total Gate Charge at 10V -32 45 nC
g(tot)
V = 400 V, I = 16 A,
DS D
Q Gate to Source Gate Charge - 8.5 - nC
V = 10 V
gs
GS
(Note 4)
Q Gate to Drain Miller Charge - 14 - nC
gd
Switching Characteristics
t Turn-On Delay Time -40 90 ns
d(on)
V = 250 V, I = 16 A,
t Turn-On Rise Time DD D - 150 310 ns
r
V = 10 V, R = 25
GS G
t Turn-Off Delay Time - 65 140 ns
d(off)
t Turn-Off Fall Time (Note 4) - 80 170 ns
f
Drain-Source Diode Characteristics
I Maximum Continuous Drain to Source Diode Forward Current - - 16.5 A
S
I Maximum Pulsed Drain to Source Diode Forward Current - - 66 A
SM
V Drain to Source Diode Forward Voltage V = 0 V, I = 16.5 A - - 1.4 V
SD GS SD
t Reverse Recovery Time - 490 - ns
V = 0 V, I = 16 A,
rr
GS SD
dI /dt = 100 A/s
Q Reverse Recovery Charge - 5.0 - C
F
rr
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 5.1 mH, I = 16.5 A, V = 50 V, R = 25 , starting T = 25C.
AS DD G J
3. I 16.5 A, di/dt 200 A/s, V BV , starting T = 25C.
SD DD DSS J
4. Essentially independent of operating temperature typical Characteristics
2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2
FDA16N50LDTU Rev. C0