ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDB9403-F085 N-Channel Power Trench MOSFET FDB9403-F085 N-Channel Power Trench MOSFET D D 40V, 110A, 1.2m Features Typ r = 1m at V = 10V, I = 80A DS(on) GS D G Typ Q = 164nC at V = 10V, I = 80A g(tot) GS D G S UIS Capability TO-263AB S RoHS Compliant FDB SERIES Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter/alternator Distributed Power Architectures and VRM Primary Switch for 12V Systems MOSFET Maximum Ratings T = 25C unless otherwise noted J Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DSS V Gate to Source Voltage 20 V GS Drain Current - Continuous (V =10) (Note 1) T = 25C 110 GS C I A D Pulsed Drain Current T = 25C See Figure4 C E Single Pulse Avalanche Energy (Note 2) 968 mJ AS Power Dissipation 333 W P D o o Derate above 25C2.22W/ C o T , T Operating and Storage Temperature -55 to + 175 C J STG o R Thermal Resistance Junction to Case 0.45 C/W JC o R Maximum Thermal Resistance Junction to Ambient (Note 3) 43 C/W JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB9403 FDB9403-F085 TO-263AB 330mm 24mm 800 units Notes: 1. Current is limited by bondwire configuration. Please see ON Semiconductor AN 9757-1 for details on test method. 2: Starting T = 25C, L = 0.47mH, I = 64A, V = 40V during inductor charging and V = 0V during time in avalanche. J AS DD DD 3: R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design while R is determined by the user s board design. The maximum rating JC JA 2 presented here is based on mounting on a 1 in pad of 2oz copper. 2012 Semiconductor Components Industries, LLC. 1 Publication Order Number: September-2017, Rev. 3 FDB9403-F085/D