FDBL86066-F085 NChannel POWERTRENCH MOSFET 100 V, 240 A, 4.1 m Features www.onsemi.com Typical R = 3.3 m at V = 10 V, I = 80 A DS(on) GS D Typical Q = 47 nC at V = 10 V, I = 80 A g(tot) GS D UIS Capability V R MAX I MAX DSS DS(ON) D Qualified to AEC Q101 100 V 4.1 m 10 V 240 A These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D Applications Automotive Engine Control PowerTrain Management G Solenoid and Motor Drivers Electrical Power Steering S Integrated Starter/Alternator N-CHANNEL MOSFET Distributed Power Architectures and VRM Primary Switch for 12 V Systems MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Value Unit V Drain-to-Source Voltage 100 V DSS HPSOF8L V Gate-to-Source Voltage 20 V GS CASE 100CU I Drain Current Continuous, 185 A D (V = 10 V) T = 25C (Note 1) GS C MARKING DIAGRAM Pulsed Drain Current, T = 25C (See Figure 4) A C E Single Pulse Avalanche Energy 93.6 mJ AS (Note 2) P Power Dissipation 300 W D Y&Z&3&K FDBL Derate Above 25C 2 W/C 86066 T , T Operating and Storage 55 to +175 C J STG Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Y = ON Semiconductor Logo 1. Current is limited by silicon. &Z = Assembly Plant Code 2. Starting T = 25C, L = 30 H, I = 79 A, V = 100 V during inductor J AS DD &3 = Numeric Date Code charging and V = 0 V during time in avalanche. DD &K = Lot Code FDBL86066 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: January, 2018 Rev. 2 FDBL86066F085/DFDBL86066F085 THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case 0.5 C/W JC R Thermal Resistance, Junction to Ambient (Note 3) 43 JA 3. R is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design, while R is determined by the board design. The maximum rating JC JA 2 presented here is based on mounting on a 1 in pad of 2oz copper. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BV Drain-to-Source Breakdown Voltage I = 250 A, V = 0 V 100 V DSS D GS I Drain-to-Source Leakage Current V = 100 V, V = 0 V A DSS DS GS T = 25C 1 J T = 175C (Note 4) 1 J I Gate-to-Source Leakage Current V = 20 V 100 nA GSS GS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 2 2.9 4.0 V GS(th) GS DS D R Static Drain to Source On Resistance V = 10 V, I = 80 A m DS(on) GS D T = 25C 3.3 4.1 J T = 175C (Note 4) 7.3 8.8 J DYNAMIC CHARACTERISTICS C Input Capacitance V = 50 V, V = 0 V, f = 1 MHz 3240 pF iss DS GS C Output Capacitance 1950 pF oss C Reverse Transfer Capacitance 26 pF rss R Gate Resistance V = 0.5 V, f = 1 MHz 0.5 g GS Q Total Gate Charge V = 0 V to 10 V, V = 50 V, I = 80 A 47 69 nC g(tot) GS DD D Q Threshold Gate Charge V = 0 V to 2 V, V = 50 V, I = 80 A 6 nC g(th) GS DD D Q Gate to Source Charge V = 50 V, I = 80 A 15 nC gs DD D Q Gate to Drain Miller Charge V = 50 V, I = 80 A 10 nC gd DD D SWITCHING CHARACTERISTICS t Turn-On Time V = 50 V, I = 80 A, V = 10 V, 35 ns on DD D GS R = 6 GEN t Turn-On Delay 18 ns d(on) t Rise Time 9 ns r t Turn-Off Delay 36 ns d(off) t Fall Time 13 ns f t Turn-Off Time 68 ns off DRAIN-SOURCE DIODE CHARACTERISTICS V Source to Drain Diode Forward I = 80 A, V = 0 V 0.9 1.25 V SD SD GS Voltage I = 40 A, V = 0 V 0.85 1.2 SD GS t Reverse Recovery Time I = 80 A, dI /dt = 300 A/ s 36 54 ns rr F SD Q Reverse Recovery Charge 84 126 nC rr t Reverse Recovery Time I = 80 A, dI /dt = 1000 A/ s 32 48 ns rr F SD Q Reverse Recovery Charge 243 365 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production. J www.onsemi.com 2