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This literature is subject to all applicable copyright laws and is not for resale in any manner.FDD6680AS March 2015 FDD6680AS 30V N-Channel PowerTrench SyncFET General Description Features The FDD6680AS is designed to replace a single 55 A, 30 V R max= 10.5 m V = 10 V DS(ON) GS MOSFET and Schottky diode in synchronous DC:DC R max= 13.0 m V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Includes SyncFET Schottky body diode R and low gate charge. The FDD6680AS DS(ON) includes an integrated Schottky diode using Fairchilds Low gate charge (21nC typical) monolithic SyncFET technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the High performance trench technology for extremely performance of the FDD6680A in parallel with a low R DS(ON) Schottky diode. High power and current handling capability Applications DC/DC converter . Low side notebook D D G G S TO-252 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Unit s V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GSS I Drain Current Continuous (Note 3) 55 A D Pulsed (Note 1a) 100 P W D Power Dissipation (Note 1) 60 (Note 1a) 3.1 (Note 1b) 1.3 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1) 2.1 C/W JC R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 C/W JA R Thermal Resistance, Junction-to-Ambient (Note 1b) 96 C/W JA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6680AS FDD6680AS 13 16mm 2500 units FDD6680AS Rev. 1.2 2008 Fairchild Semiconductor Corporation