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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDD6N20TM N-Channel UniFET MOSFET November 2013 FDD6N20TM TM N-Channel UniFET MOSFET 200 V, 4.5 A, 800 m Features Description TM UniFET MOSFET is Fairchild Semiconductors high voltage R = 600 m (Typ.) V = 10 V, I = 2.3 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 4.7 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche en- Low C (Typ. 6.3 pF) rss ergy strength. This device family is suitable for switching power 100% Avalanche Tested converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp bal- RoHS Compliant lasts. Applications LCD/LED/PDP TV Consumer Appliances Lighting Uninterruptible Power Supply D D G G S D-PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDD6N20TM Unit V Drain to Source Voltage 200 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 4.5 C I Drain Current A D o - Continuous (T = 100 C) 2.7 C I Drain Current - Pulsed (Note 1) 18 A DM E Single Pulsed Avalanche Energy (Note 2) 60 mJ AS I Avalanche Current (Note 1) 4.5 A AR E Repetitive Avalanche Energy (Note 1) 4.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 40 W C P Power Dissipation D o o - Derate Above 25C0.32W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Thermal Characteristics Symbol Parameter FDD6N20TM Unit R Thermal Resistance, Junction to Case, Max. 3.1 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 110 JA 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDD6N20TM Rev. C1