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FDD8424H F085A Dual N & P-Channel PowerTrench MOSFET Jan 2013 FDD8424H F085A tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m P-Channel: -40V, -20A, 54m Features General Description Q1: N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductors Max r = 24m at V = 10V, I = 9.0A DS(on) GS D advanced PowerTrench process that has been especially Max r = 30m at V = 4.5V, I = 7.0A DS(on) GS D tailored to minimize on-state resistance and yet maintain superior switching performance. Q2: P-Channel Max r = 54m at V = -10V, I = -6.5A DS(on) GS D Application Max r = 70m at V = -4.5V, I = -5.6A DS(on) GS D Inverter Fast switching speed H-Bridge Qualified to AEC Q101 RoHS Compliant D1 D2 D1/D2 G1 G2 G2 S2 G1 S1 S1 S2 Dual DPAK 4L N-Channel P-Channel MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 40 -40 V DS V Gate to Source Voltage 20 20 V GS Drain Current - Continuous (Package Limited) 20 -20 - Continuous (Silicon Limited) T = 25C 26 -20 C I A D - Continuous T = 25C 9.0 -6.5 A - Pulsed 55 -40 Power Dissipation for Single Operation T = 25C (Note 1) 30 35 C P T = 25C (Note 1a) 3.1 W D A T = 25C (Note 1b) 1.3 A E Single Pulse Avalanche Energy (Note 3) 29 33 mJ AS T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case, Single Operation for Q1 (Note 1) 4.1 JC C/W R Thermal Resistance, Junction to Case, Single Operation for Q2 (Note 1) 3.5 JC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8424H FDD8424H F085A TO-252-4L 13 12mm 2500 units 1 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com FDD8424H F085A Rev.C1