MOSFET - P-Channel Logic Level PowerTrench -40 V, 13.5 m , -50 A FDD9510L-F085 Features Typ R = 11 m at V = 10 V I = 50 A DS(on) GS D www.onsemi.com Typ Q = 28 nC at V = 10 V I = 50 A g(tot) GS D UIS Capability D Qualified to AEC Q101 These Devices are PbFree and are RoHS Compliant G S Applications DPAK TO252 Automotive Engine Control CASE 369AS Powertrain Management Solenoid and Motor Drivers Electrical Power Steering D Integrated Starter/Alternator Distributed Power Architectures and VRM Primary Switch for 12 V Systems G ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit S Drain to Source Voltage V 40 V DSS Gate to Source Voltage V 16 V GS ORDERING INFORMATION Drain Current Continuous I 50 A D See detailed ordering and shipping information on page 2 of (V = 10 V) (T = 25C) (Note 1) GS C this data sheet. Pulsed Drain Current (T = 25C) I See A C D Figure 4 Single Pulse Avalanche Energy (Note 2) E 35.3 mJ AS Power Dissipation P 75 W D Derate above 25C P 0.5 W/C D Operating and Storage Temperature T , T 55 to C J STG Range +175 Thermal Resistance (Junction to Case) R 2 C/W JC Maximum Thermal Resistance R 52 C/W JA (Junction to Ambient) (Note 3) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by wirebond configuration 2. Starting Tj = 25C, L = 40 H, I = 42 A, V = 40 V during inductor AS DD charging and V = 0 V during time in avalanche DD 3. R is the sum of the junctiontocase and casetoambient thermal JA resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by design while R JC JA is determined by the users board design. The maximum rating presented 2 here is based on mounting on a 1 in pad of 2 oz copper. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: February, 2020 Rev. 1 FDD9510LF085/DFDD9510L F085 PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Reel Size Tape Width Quantity FDD9510LF085 FDD9510L DPAK (TO252) 13 16 mm 2500 Units ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage V =0V, I = 250 A 40 V DSS GS D I Drain to Source Leakage Current V = 40 V, T =25 C 1 A DSS DS J V =0V GS 1 mA T = 175 C (Note 4) J I Gate to Source Leakage Current V = 16 V 100 nA GSS GS ON CHARACTERISTICS V Gate to Source Threshold Voltage V =V , I = 250 A 1 1.9 3 V GS(th) GS DS D R Drain to Source OnResistance V = 4.5 V, I = 50 A, T =25 C 16 22 m DS(on) GS D J V = 10 V, T =25 C 11 13.5 m GS J I = 50 A D T = 175 C (Note 4) 18 22.7 m J DYNAMIC CHARACTERISTICS C Input Capacitance V = 20 V, V = 0 V, f = 1 MHz 2020 pF iss DS GS C Output Capacitance 785 pF oss C Reverse Transfer Capacitance 36 pF rss R Gate Resistance V = 0.5 V, f = 1 MHz 23 g GS Q Total Gate Charge V = 20 V, V = 0 V to 10 V 28 37 nC g(tot) DD GS I = 50 A D Q Total Gate Charge V = 0 V to 4.5 V 13 nC g(4.5) GS Q Threshold Gate Charge V = 0 V to 1V 2 nC g(th) GS Q Gate to Source Gate Charge V = 20 V, I = 50 A 7 nC gs DD D Q Gate to Drain Miller Charge 4 nC gd SWITCHING CHARACTERISTICS t Turn-On Time V = 20 V, I = 50 A, 44 ns DD D on V = 10 V, R =6 GS GEN t Turn-On Delay Time 8 ns d(on) t Turn-On Rise Time 21 ns r t Turn-Off Delay Time 113 ns d(off) t Turn-Off Fall Time 35 ns f t Turn-Off Time 220 ns off DRAINSOURCE DIODE CHARACTERISTICS V Source to Drain Diode Voltage V =0V, I = 50 A 0.97 1.25 V SD GS SD V =0V, I = 25 A 0.9 1.2 V GS SD T Reverse Recovery Time I = 50 A, dI /dt = 100 A/ s 42 63 ns rr F SD Q Reverse Recovery Charge 31 56 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production J www.onsemi.com 2