MOSFET N-Channel, Logic Level, POWERTRENCH FDG315N General Description This N Channel Logic Level MOSFET is produced using www.onsemi.com ON Semiconductors advanced POWERTRENCH process that has been especially tailored to minimize onstate resistance and yet S maintain superior switching performance. D These devices are well suited for low voltage and battery powered D applications where low inline power loss and fast switching are G D required. D Features SC88/SC706/SOT363 CASE 419B02 2 A, 30 V R = 0.12 V = 10 V DS(ON) GS R = 0.16 V = 4.5 V DS(ON) GS MARKING DIAGRAM Low Gate Charge (2.1 nC Typical) High Performance Trench Technology for Extremely Low R DS(ON) 15M Compact Industry Standard SC706 Surface Mount Package These Devices are PbFree and are RoHS Compliant Applications 15 = Specific Device Code DC/DC Converter M = Assembly Operation Month Load Switch Power Management PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A 1 6 Symbol Parameter Ratings Units V DrainSource Voltage 30 V DSS 5 2 V GateSource Voltage 20 V GSS I Drain Current Continuous 2 A 33 D 4 (Note 1a) Pulsed 6 P Power Dissipation for (Note 1a) 0.75 W D ORDERING INFORMATION Single Operation See detailed ordering and shipping information on page 2 of (Note 1b) 0.48 this data sheet. T , T Operating and Storage Junction 55 to +150 C J stg Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Thermal Resistance, Junction to Ambient (Note 1b) 260 C/W JA 1. R is the sum of the junctiontocase and casetoambient thermal resistance where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board design. JC CA 2 a) 170C/W when mounted on a 1 in pad of 2 oz copper. b) 260C/W when mounted on a minimum pad. Semiconductor Components Industries, LLC, 2000 1 Publication Order Number: June, 2020 Rev. 3 FDG315N/DFDG315N PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Reel Size Tape Width Shipping 15 FDG315N 7 8 mm 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage V =0V, I = 250 A 30 V DSS GS D BV / T Breakdown Voltage Temperature I = 250 A, Referenced to 25 C 26 mV/ C DSS J D Coefficient I Zero Gate Voltage Drain Current V =24V, V =0V 1 A DSS DS GS I GateBody Leakage Forward V =16V, V =0V 100 nA GSS GS DS I GateBody Leakage Reverse V = 16 V, V =0V 100 nA GSS GS DS ON CHARACTERISTICS (Note 2) V Gate Threshold Voltage V =V , I = 250 A 1 1.8 3 V GS(th) DS GS D V / T Gate Threshold Voltage I = 250 A, Referenced to 25 C 4 mV/ C GS(th) J D Temperature Coefficient R Static DrainSource V =10V, I =2 A 0.100 0.12 DS(on) GS D OnResistance V =10V, I = 2 A, T = 125 C 0.140 0.20 GS D J V = 4.5 V, I = 1.7 A 0.130 0.16 GS D I OnState Drain Current V = 4.5 V, V =5V 3 A D(on) GS DS G Forward Transconductance V =5V, I =2A 5 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V =15V, V = 0 V, f = 1.0 MHz 220 pF iss DS GS C Output Capacitance 50 pF oss C Reverse Transfer Capacitance 20 pF rss SWITCHING CHARACTERISTICS (Note 2) t Turn-On Delay Time V =15V, I =1A, 3 6 ns DD D d(on) V =10V, R =6 GS GEN t Turn-On Rise Time 11 22 ns r t Turn-Off Delay Time 7 14 ns d(off) t Turn-Off Fall Time 3 6 ns f Q Total Gate Charge V =15V, I =2A, 2.1 4 nC g DS D V =5V GS Q GateSource Charge 0.8 nC gs Q GateDrain Charge 0.7 nC gd DRAINSOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous DrainSource Diode Forward Current 0.42 A S V DrainSource Diode Forward V =0V, I = 0.42 A (Note 2) 0.7 1.2 V SD GS S Voltage Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% www.onsemi.com 2