FDMA1027PT Dual P-Channel PowerTrench MOSFET May 2009 FDMA1027PT Dual P-Channel PowerTrench MOSFET 20 V, 3 A, 120 m: Features General Description This device is designed specifically as a single package solution Max r = 120 m : at V = -4.5 V, I = -3.0 A DS(on) GS D for the battery charge switch in cellular handset and other Max r = 160 m : at V = -2.5 V, I = -2.5 A DS(on) GS D ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum Max r = 240 m : at V = -1.8 V, I = -1.0 A DS(on) GS D conduction losses. When connected in the typical common Low profile - 0.55 mm maximum - in the new package source configuration, bi-directional current flow is possible. MicroFET 2x2 Thin The MicroFET 2x2 Thin package offers exceptional thermal RoHS Compliant performance for it s physical size and is well suited to linear mode applications. Free from halogenated compounds and antimony oxides Applications Battery management Load switch Battery protection PIN 1 S1 G1 D2 1 6 S1 D1 D1 D2 5 G2 G1 2 D2 4 3 S2 D1 G2 S2 MicroFET 2X2 Thin MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -20 V DS V Gate to Source Voltage 8 V GS I Drain Current -Continuous T = 25 C (Note 1a) -3 D A A -Pulsed -6 Power Dissipation for Single Operation T = 25 C (Note 1a) 1.4 A P W D Power Dissipation for Single Operation T = 25 C (Note 1b) 0.7 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 86 T JA R Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 173 T JA C/W R Thermal Resistance, Junction to Ambient (Dual Operation) (Note 1c) 69 T JA R Thermal Resistance, Junction to Ambient (Dual Operation) (Note 1d) 151 T JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 27 FDMA1027PT MicroFET 2x2 Thin 7 8 mm 3000 units 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMA1027PT Rev.B4 4 3 5 2 6 1 FDMA1027PT Dual P-Channel PowerTrench MOSFET Electrical Characteristics T = 25 C unless otherwise noted J Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV Drain to Source Breakdown Voltage I = -250 P A, V = 0 V -20 V DSS D GS BV Breakdown Voltage Temperature DSS I = -250 P A, referenced to 25 C -12 mV/C D T Coefficient J I Zero Gate Voltage Drain Current V = -16 V, V = 0 V -1 P A DSS DS GS I Gate to Source Leakage Current V = 8 V, V = 0 V 100 nA GSS GS DS On Characteristics V Gate to Source Threshold Voltage V = V , I = -250 P A -0.4 -0.7 -1.3 V GS(th) GS DS D V Gate to Source Threshold Voltage GS(th) I = -250 P A, referenced to 25 C 2 mV/C D T Temperature Coefficient J V = -4.5 V, I = -3.0 A 90 120 GS D V = -2.5 V, I = -2.5 A 120 160 GS D r Drain to Source On Resistance m : V = -1.8 V, I = -1.0 A 172 240 DS(on) GS D V = -4.5 V, I = -3.0 A , GS D 118 160 T = 125 C J I On to State Drain Current V = -4.5 V, V = -5 V -20 A D(on) GS DS g Forward Transconductance V = -5 V, I = -3.0 A 7 S FS DS D Dynamic Characteristics C Input Capacitance 435 pF iss V = -10 V, V = 0 V, DS GS C Output Capacitance 80 pF oss f = 1 MHz C Reverse Transfer Capacitance 45 pF rss Switching Characteristics t Turn-On Delay Time 918 ns d(on) V = -10 V, I = -1.0 A DD D t Rise Time 11 19 ns r V = -4.5 V, R = 6 : GS GEN t Turn-Off Delay Time 15 27 ns d(off) t Fall Time 612 ns f Q Total Gate Charge 46 nC g V = -10 V, I = -3.0 A DD D Q Gate to Source Gate Charge 0.8 nC gs V = -4.5 V GS Q Gate to Drain Miller Charge 0.9 nC gd Drain-Source Diode Characteristics I Maximum continuous Source-Drain Diode Forward Current -1.1 A S V Source to Drain Diode Forward Voltage V = 0 V, I = -1.1 A (Note 2) -0.8 -1.2 V SD GS S t Reverse Recovery Time 17 ns rr I = -3.0 A, di/dt = 100 A/P s F Q Reverse Recovery Charge 6 nC rr 2009 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDMA1027PT Rev.B4