Product Information

FDH5500_F085

FDH5500_F085 electronic component of ON Semiconductor

Datasheet
MOSFET Trans MOS N-Ch 55V 75A

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.0291 ea
Line Total: USD 6.03

299 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
299 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

FDH5500_F085
ON Semiconductor

1 : USD 4.14
10 : USD 3.519
25 : USD 3.381
100 : USD 2.9785
250 : USD 2.806
450 : USD 2.668
900 : USD 2.3575
2700 : USD 2.3575
5400 : USD 2.2655

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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MOSFET Power, N-Channel, UltraFET 55 V, 75 A, 7 m FDH5500-F085 Features www.onsemi.com Typ R = 5.2 m at V = 10 V, I = 75 A DS(on) GS D Typ Q = 118 nC at V = 10 V g(10) GS Simulation Models V R MAX I MAX DSS DS(ON) D Temperature Compensated PSPICE and Saber Models 55 V 7 m 75 A Peak Current vs Pulse Width Curve UIS Rating Curve D AECQ101 Qualified and PPAP Capable This Device is PbFree and is RoHS Compliant Applications G DC Linear Mode Control Solenoid and Motor Control S Switching Regulators DRAIN Automotive Systems (FLANGE) G D S JEDEC TO247 CASE 340CK MARKING DIAGRAM Y&Z&3&K FDH5500 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FDH5500 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: April, 2020 Rev. 2 FDH5500F085/DFDH5500 F085 MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage (Note 1) 55 V DSS V Gate to Gate Voltage (R = 20 k ) (Note 1) 55 V DGR GS V Gate to Source Voltage 20 V GS I Drain Current Continuous (T < 135C, V = 10 V) 75 A D C GS Pulsed Figure 4 E Single Pulse Avalanche Energy (Note 2) 864 mJ AS P Power Dissipation (T = 25C) 375 W D C Derate Above 25C 2.5 W/C T , T Operating and Storage Temperature 55 to +175 C J STG T Max. Lead Temp. for Soldering (at 1.6 mm from case for 10 sec) 300 C L T Max. Package Temp. for Soldering (Package Body for 10 sec) 260 C pkg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Starting T = 25C to 175C. J 2. Starting TJ = 25C, L = 0.48 mH, I = 60 A AS THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance Junction to Case 0.4 C/W JC 2 R Thermal Resistance Junction to Ambient TO247, 1in copper pad area 30 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FDH5500 FDH5500F085 TO247 Tube N/A 30 Units www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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