FDMA8878 ON Semiconductor

FDMA8878 electronic component of ON Semiconductor
FDMA8878 ON Semiconductor
FDMA8878 MOSFETs
FDMA8878  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FDMA8878 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDMA8878 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. FDMA8878
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET N-CHAN 30V 9A 2.4W
Datasheet: FDMA8878 Datasheet (PDF)
Price (USD)
1: USD 1.675 ea
Line Total: USD 1.68 
Availability : 114
  
Ship by Fri. 08 Aug to Tue. 12 Aug
QtyUnit Price
1$ 1.675
10$ 1.2
100$ 0.8426
500$ 0.7524
1000$ 0.6853
3000$ 0.6754
6000$ 0.6578
24000$ 0.6424

Availability 114
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.675
10$ 1.2
100$ 0.8426
500$ 0.7524
1000$ 0.6853
3000$ 0.6754
6000$ 0.6578
24000$ 0.6424


Availability 1326
Ship by Tue. 19 Aug to Fri. 22 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.1888
10$ 1.9894
30$ 1.2701
100$ 1.186
500$ 1.1506
1000$ 1.1337


Availability 5380
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 297
Multiples : 1
QtyUnit Price
297$ 1.3168
500$ 1.1395
1000$ 1.0508


Availability 356
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 297
Multiples : 1
QtyUnit Price
297$ 1.3168


Availability 2376
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 297
Multiples : 1
QtyUnit Price
297$ 1.3168
500$ 1.1395
1000$ 1.0508


Availability 1346
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 301
Multiples : 1
QtyUnit Price
301$ 0.8642
303$ 0.8601
308$ 0.8445
314$ 0.8289
500$ 0.8133
1000$ 0.767

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDMA8878 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDMA8878 and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDMA8878 Single N-Channel Power Trench MOSFET FDMA8878 Single N-Channel Power Trench MOSFET 30 V, 9.0 A, 16 m General Description Features This N-Channel MOSFET is produced using ON Max r = 16 m at V = 10 V, I = 9.0 A DS(on) GS D Semiconductors advanced Power Trench process that has been optimized for r , switching performance. Max r = 19 m at V = 4.5 V, I = 8.5 A DS(on) DS(on) GS D High performance trench technology for extremely low r DS(on) Fast switching speed Application RoHS Compliant DC/DC Buck Converters Load Switch in NB Notebook Battery Power Management Pin 1 G D D Bottom Drain Contact D D Drain Source D D G S D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 3) 20 V GS Drain Current -Continuous (Package Limited) T = 25 C 10 C I -Continuous T = 25 C (Note 1a) 9.0 A D A -Pulsed 40 Power Dissipation T = 25 C (Note 1a) 2.4 A P W D Power Dissipation T = 25 C (Note 1b) 0.9 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 52 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 145 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 878 FDMA8878 MicroFET 2x2 7 8 mm 3000 units 2012 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 3 FDMA8878/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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