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FDMA910PZ Single P-Channel PowerTrench MOSFET June 2014 FDMA910PZ Single P-Channel PowerTrench MOSFET -20 V, -9.4 A, 20 m Features General Description Max r = 20 m at V = -4.5 V, I = -9.4 A This device is designed specifically for battery charge or load DS(on) GS D switching in cellular handset and other ultraportable Max r = 24 m at V = -2.5 V, I = -8.6 A DS(on) GS D applications.It features a MOSFET with low on-state resistance Max r = 34 m at V = -1.8 V, I = -7.2 A and zener diode protection against ESD. The MicroFET 2X2 DS(on) GS D package offers exceptional thermal performance for its physical Low Profile - 0.8 mm maximum in the new package MicroFET size and is well suited to linear mode applications. 2x2 mm HBM ESD protection level > 2.8k V typical (Note 3) Free from halogenated compounds and antimony oxides RoHS Compliant Pin 1 G D D Bottom Drain Contact D 1 6 D Drain Source D 2 5 D 3 4 G S D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -20 V DS V Gate to Source Voltage 8 V GS -Continuous T = 25C (Note 1a) -9.4 A I A D -Pulsed -45 Power Dissipation T = 25C (Note 1a) 2.4 A P W D Power Dissipation T = 25C (Note 1b) 0.9 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 52 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 145 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 910 FDMA910PZ MicroFET 2X2 7 8 mm 3000 units 2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMA910PZ Rev.C5