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TM FDMC2D8N025S N-Channel PowerTrench SyncFET www.onsemi.com FDMC2D8N025S TM N-Channel PowerTrench SyncFET 25 V, 124 A, 1.9 m Features General Description The FDMC2D8N025S has been designed to minimize losses in Max r = 1.9 m at V = 10 V, I = 28 A DS(on) GS D power conversion application. Advancements in both silicon and Max r = 2.4 m at V = 4.5 V, I = 25 A DS(on) GS D package technologies have been combined to offer the lowest r while maintaining excellent switching performance. This DS(on) High Performance Technology for Extremely Low r DS(on) device has the added benefit of an efficient monolithic schottky TM SyncFET Schottky Body Diode body diode. 100% UIL Tested Applications RoHS Compliant Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU Low Side Switch Networking Point of Load Low Side Switch Telecom Secondary Side Rectification Pin 1 Pin 1 S S S D S G S D S D D D D D G D Top Bottom Power 33 MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage 16 V GS Drain Current -Continuous T = 25 C (Note 5) 124 C -Continuous T = 100 C (Note 5) 78 C I A D -Continuous T = 25 C (Note 1a) 28 A -Pulsed (Note 4) 583 E Single Pulse Avalanche Energy (Note 3) 96 mJ AS Power Dissipation T = 25 C 47 C P W D Power Dissipation T = 25 C (Note 1a) 2.4 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.7 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 53 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC2D8N025S FDMC2D8N025S Power 33 13 12 mm 3000 units Semiconductor Components Industries, LLC, 2016 Publication Order Number: December, 2016, Rev. 1.0 FDMC2D8N025S/D 1