DATA SHEET www.onsemi.com MOSFET N-Channel, 8 S 7 S 6 S 5 G POWERTRENCH 100 V, 12 A, 110 m 1 D D 2 3 D 4 D Top Bottom FDMC3612, FDMC3612-L701 WDFN8 3.3x3.3, 0.65P CASE 511DR FDMC3612 General Description This NChannel MOSFET is produced using onsemis advanced S POWERTRENCH process that has been especially tailored to S S G minimize the onstate resistance and yet maintain superior switching performance. D D D D Features Bottom Top Max r = 110 m at V = 10 V, I = 3.3 A DS(on) GS D WDFN8 3.3x3.3, 0.65P Max r = 122 m at V = 6 V, I = 3.0 A DS(on) GS D CASE 511DQ FDMC3612L701 Low Profile 1 mm Max in Power 33 100% UIL Tested MARKING DIAGRAM These Devices are PbFree and are RoHS Compliant Applications FDMC ON AXYKK 3612 DC DC Conversion FDMC ALYW 3612 PSE Switch FDMC3612 FDMC3612L701 FDMC3612= Specific Device Code A = Assembly Location XY = 2Digit Date Code KK = 2Digit Lot Run Traceability Code L = Wafer Lot Number YW = Assembly Start Week PIN ASSIGNMENT D 5 4 G D 6 3 S D 7 2 S D 8 1 S ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: November, 2021 Rev. 6 FDMC3612/DFDMC3612, FDMC3612 L701 MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Rating Unit V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current A Continuous T = 25C 12 C I D Continuous (Note 1a) T = 25C 3.3 A Pulsed 15 E Single Pulse Avalanche Energy (Note 2) 32 mJ AS P Power Dissipation T = 25C 35 W D C Power Dissipation (Note 1a) T = 25C 2.3 A T , T Operating and Storage Junction Temperature Range 55 to + 150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Rating Unit C/W R JC Thermal Resistance, Junction to Case 3.5 R JA Thermal Resistance, Junction to Ambient (Note 1a) 53 2 1. R is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR4 material. R is guaranteed JA JC by design while R is determined by the users board design. CA 2 a. 53C/W when mounted on a 1 in pad b. 125C/W when mounted on a minimum of 2 oz copper pad of 2 oz copper 2. Starting T = 25C Nch: L = 1 mH, I = 8 A, V = 90 V, V = 10 V. J AS DD GS www.onsemi.com 2