X-On Electronics has gained recognition as a prominent supplier of IPD60R280P7SAUMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPD60R280P7SAUMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPD60R280P7SAUMA1 Infineon

IPD60R280P7SAUMA1 electronic component of Infineon
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Part No.IPD60R280P7SAUMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET CONSUMER
Datasheet: IPD60R280P7SAUMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.7023 ea
Line Total: USD 1.7 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.5112

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 1.7023
10 : USD 1.3435
100 : USD 1.0478
500 : USD 0.8531
1000 : USD 0.65
5000 : USD 0.6191

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.638

0
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 4.6212
10 : USD 1.6669
100 : USD 1.3036

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPD60R280P7SAUMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPD60R280P7SAUMA1 and other electronic components in the MOSFETs category and beyond.

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IPD60R280P7S MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. 2 1 Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much 3 cooler. Features Drain Pin 2 Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness Gate Significant reduction of switching and conduction losses Pin 1 Excellent ESD robustness >2kV (HBM) for all products Better RDS(on)/package products compared to competition enabled by a Source low R *A (below 1Ohm*mm) DS(on) Pin 3 Product validation acc. JEDEC Standard Benefits Ease of use and fast design-in through low ringing tendency and usage across PFC and PWM stages Simplified thermal management due to low switching and conduction losses Increased power density solutions enabled by using products with smaller footprint and higher manufacturing quality due to >2 kV ESD protection Suitable for a wide variety of applications and power ranges Potential applications PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS Tj,max 650 V RDS(on),max 280 m Q 18 nC g,typ I 36 A D,pulse E 400V 2.1 J oss Body diode di /dt 900 A/s F Type / Ordering Code Package Marking Related Links IPD60R280P7S PG-TO 252-3 60S280P7 see Appendix A Final Data Sheet 1 Rev. 2.1, 2018-04-25600V CoolMOS P7 Power Transistor IPD60R280P7S Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.1, 2018-04-25

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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