FDMC86116LZ ON Semiconductor

FDMC86116LZ electronic component of ON Semiconductor
FDMC86116LZ ON Semiconductor
FDMC86116LZ MOSFETs
FDMC86116LZ  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FDMC86116LZ MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDMC86116LZ MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. FDMC86116LZ
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 100V/20V w/Zener NCH PowerTrench MOSFET
Datasheet: FDMC86116LZ Datasheet (PDF)
Price (USD)
341: USD 0.7644 ea
Line Total: USD 260.66 
Availability : 1474
  
Ship by Mon. 11 Aug to Fri. 15 Aug
QtyUnit Price
341$ 0.7644
381$ 0.6825
385$ 0.676
525$ 0.4953
1000$ 0.4663

Availability 5820
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.4949
6000$ 0.4802


Availability 521
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 468
Multiples : 1
QtyUnit Price
468$ 0.8339
520$ 0.7506
1000$ 0.6656
10000$ 0.5935
100000$ 0.4973


Availability 1474
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 341
Multiples : 1
QtyUnit Price
341$ 0.7644
381$ 0.6825
385$ 0.676
525$ 0.4953
1000$ 0.4663

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
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Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDMC86116LZ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDMC86116LZ and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET N-Channel, Shielded Gate, POWERTRENCH 100 V, 7.5 A, 103 m FDMC86116LZ, www.onsemi.com FDMC86116LZ-L701 8 S 7 S 6 S General Description 5 G This N Channel logic Level MOSFETs are produced using ONSemiconductors advanced POWERTRENCH process that 1 D D 2 3 D 4 D incorporates Shielded Gate technology. This process has been Top Bottom optimized for the onstate resistance and yet maintain superior WDFN8 3.3x3.3, 0.65P switching performance. GS zener has been added to enhance ESD CASE 511DR voltage level. FDMC3612 S Features S S G Max r = 103 m at V = 10 V, I = 3.3 A DS(on) GS D D Max r = 153 m at V = 4.5 V, I = 2.7 A D DS(on) GS D D D HBM ESD Protection Level > 3 kV Typical (Note 1) Bottom Top 100% UIL Tested WDFN8 3.3x3.3, 0.65P CASE 511DQ These Devices are PbFree and are RoHS Compliant FDMC3612L701 Applications MARKING DIAGRAM DC DC Conversion FDMC ON AXYKK 86116Z FDMC ALYW 86116Z FDMC86116LZ FDMC86116LZL701 FDMC86116Z = Specific Device Code A = Assembly Site XY = 2Digit Date Code KK = 2Digit Lot Run Traceability Code L = Wafer Lot Number YW = Assembly Start Week PIN ASSIGNMENT S 1 8 D S 2 7 D S 3 6 D G 4 5 D ORDERING INFORMATION 1. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: February, 2020 Rev. 3 FDMC86116LZ/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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