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TM FDMS7670AS N-Channel PowerTrench SyncFET October 2014 FDMS7670AS TM N-Channel PowerTrench SyncFET 30 V, 42 A, 3 m : Features General Description The FDMS7670AS has been designed to minimize losses in Max r = 3.0 m : at V = 10 V, I = 21 A DS(on) GS D power conversion application. Advancements in both silicon and Max r = 3.2 m : at V = 7 V, I = 19 A DS(on) GS D package technologies have been combined to offer the lowest r while maintaining excellent switching performance. This Advanced Package and Silicon combination for low r DS(on) DS(on) device has the added benefit of an efficient monolithic Schottky and high efficiency body diode. SyncFET Schottky Body Diode Applications MSL1 robust package design 100% UIL tested Synchronous Rectifier for DC/DC Converters RoHS Compliant Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Bottom Top Pin 1 D G S 5 4 S S D G S 6 3 D S 7 2 D S D 8 1 D D D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) 20 V GS Drain Current -Continuous (Package limited) T = 25 C 42 C -Continuous (Silicon limited) T = 25 C 113 C I A D -Continuous T = 25 C (Note 1a) 22 A -Pulsed 150 dv/dt MOSFET dv/dt 1.8 V/ns E Single Pulse Avalanche Energy (Note 3) 98 mJ AS Power Dissipation T = 25 C 65 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.9 T JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 T JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7670AS FDMS7670AS Power 56 13 12 mm 3000 units 1 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMS7670AS Rev.C2