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FDMS86201 N-Channel Shielded Gate PowerTrench MOSFET October 2014 FDMS86201 N-Channel Shielded Gate PowerTrench MOSFET 120 V, 49 A, 11.5 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductors advanced PowerTrench process that Max r = 11.5 m at V = 10 V, I = 11.6 A DS(on) GS D incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior Max r = 14.5 m at V = 6 V, I = 10.7 A DS(on) GS D switching performance. Advanced Package and Silicon combination for low r DS(on) and high efficiency Application MSL1 robust package design DC-DC Conversion 100% UIL tested RoHS Compliant Bottom Top Pin 1 S D S S S G S D S D D D G D D D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 120 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C 49 C I -Continuous T = 25 C (Note 1a) 11.6 A D A -Pulsed 160 E Single Pulse Avalanche Energy (Note 3) 264 mJ AS Power Dissipation T = 25 C 104 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.2 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS86201 FDMS86201 Power 56 13 12 mm 3000 units 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMS86201 Rev.C3