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FDMS86300 N-Channel PowerTrench MOSFET December 2015 FDMS86300 N-Channel PowerTrench MOSFET 80 V, 122 A, 3.9 m Features General Description Max r = 3.9 m at V = 10 V, I = 19 A This N-Channel MOSFET has been designed specifically to DS(on) GS D improve the overall efficiency and to minimize switch node Max r = 5.5 m at V = 8 V, I = 15.5 A DS(on) GS D ringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low r conventional switching PWM controllers.It has been optimized DS(on) for low gate charge, low r , fast switching speed and body and high efficiency DS(on) diode reverse recovery performance. Next generation enhanced body diode technology, engineered for soft recovery Applications MSL1 robust package design OringFET / Load Switching 100% UIL tested DC-DC Conversion RoHS Compliant Bottom Top Pin 1 S G D 5 4 S S G D 6 3 S S D 7 2 D S D 8 1 D D D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 80 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C 122 C -Continuous T = 100 C 78 C I A D -Continuous T = 25 C (Note 1a) 19 A -Pulsed (Note 4) 556 E Single Pulse Avalanche Energy (Note 3) 252 mJ AS Power Dissipation T = 25 C 104 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.2 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS86300 FDMS86300 Power 56 13 12 mm 3000 units 2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS86300 Rev.1.4