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FDMS86263P P-Channel PowerTrench MOSFET October 2014 FDMS86263P P-Channel PowerTrench MOSFET -150 V, -22 A, 53 m Features General Description Max r = 53 m at V = -10 V, I = -4.4 A This P-Channel MOSFET is produced using Fairchild DS(on) GS D Max r = 64 m at V = -6 V, I = -4 A Semiconductors advanced PowerTrench technology. This DS(on) GS D very high density process is especially tailored to minimize Very low Rds-on in Mid-Voltage P-Channel silicon technology on-state resistance and optimized for superior switching optimized for low Qg performance. This product is optimised for fast switching applications as Applications well as load switch applications 100% UIL tested Active Clamp Switch RoHS Compliant Load Switch Bottom Top Pin 1 S D S S S G S D S D D D G D D D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -150 V DS V Gate to Source Voltage 25 V GS Drain Current -Continuous T = 25 C -22 C I -Continuous T = 25 C (Note 1a) -4.4 A D A -Pulsed -70 E Single Pulse Avalanche Energy (Note 3) 384 mJ AS Power Dissipation T = 25 C 104 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.2 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS86263P FDMS86263P Power 56 13 12 mm 3000 units 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMS86263P Rev.C2