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V = 10 V, I = 9 A UniFET MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 20 nC) This MOSFET is tailored to reduce on-state resistance, and to Low C (Typ. 24 pF) rss provide better switching performance and higher avalanche energy strength. The body diodes reverse recovery perfor- 100% Avalanche Tested mance of UniFET FRFET MOSFET has been enhanced by RoHS Compliant lifetime control. Its t is less than 100nsec and the reverse dv/dt rr immunity is 15V/ns while normal planar MOSFETs have over Applications 200nsec and 4.5V/nsec respectively. Therefore, it can remove LCD/LED TV additional component and improve system reliability in certain applications in which the performance of MOSFETs body diode Consumer Appliances is significant. This device family is suitable for switching power Lighting converter applications such as power factor correction (PFC), Uninterruptible Power Supply flat panel display (FPD) TV power, ATX and electronic lamp bal- lasts. AC-DC Power Supply D G G D G S D TO-220 TO-220F S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDP18N20F FDPF18N20FT Unit V Drain to Source Voltage 200 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 18 18* C I Drain Current A D o - Continuous (T = 100 C) 10.8 10.8* C I Drain Current - Pulsed (Note 1) 72 72* A DM E Single Pulsed Avalanche Energy (Note 2) 324 mJ AS I Avalanche Current (Note 1) 18 A AR E Repetitive Avalanche Energy (Note 1) 10 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 100 41 W C P Power Dissipation D o o - Derate Above 25 C 0.83 0.33 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FDP18N20F FDPF18N20FT Unit R Thermal Resistance, Junction to Case, Max. 1.2 3.0 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 JA 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDP18N20F / FDPF18N20FT Rev. C1