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FDS8842NZ N-Channel Power Trench MOSFET February 2009 FDS8842NZ N-Channel PowerTrench MOSFET 40 V, 14.9 A, 7.0 m Features General Description Max r = 7.0 m at V = 10 V, I = 14.9 A The FDS8842NZ has been designed to minimize losses in DS(on) GS D power conversion application. Advancements in both silicon and Max r = 11.6 m at V = 4.5 V, I = 11.6 A DS(on) GS D package technologies have been combined to offer the lowest HBM ESD protection level of 4.4 kV typical(note 3) r while maintaining excellent switching performance. DS(on) High performance trench technology for extremely low r Applications DS(on) and fast switching Synchronous Buck for Notebook Vcore and Server High power and current handling capability Notebook Battery Termination is Lead-free and RoHS Compliant Load Switch D D D G D D D S D S G SO-8 S D S S Pin 1 S MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous 14.9 I A D -Pulsed 93 E Single Pulse Avalanche Energy (Note 4) 253 mJ AS Power Dissipation T = 25 C (Note 1a) 2.5 A P W D Power Dissipation T = 25 C (Note 1b) 1.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 25 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS8842NZ FDS8842NZ SO8 13 12 mm 2500 units 1 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FDS8842NZ Rev.C