Product Information

FDS8935

FDS8935 electronic component of ON Semiconductor

Datasheet
MOSFET -80V Dual P-Channel PowerTrench MOSFET

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 2.0231 ea
Line Total: USD 5057.75

7275 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
2425 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 2500
Multiples : 2500

Stock Image

FDS8935
ON Semiconductor

2500 : USD 1.2769
5000 : USD 1.1743
10000 : USD 1.099
25000 : USD 1.077

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Tradename
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Factory Pack Quantity :
Configuration
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDS8935 Dual P-Channel PowerTrench MOSFET FDS8935 Dual P-Channel PowerTrench MOSFET -80 V, -2.1 A, 183 m General Description This P-channel MOSFET is produced using ON Features Semiconductors advanced PowerTrench process that has Max r = 183 m at V = -10 V, I = -2.1 A DS(on) GS D been optimized for r , switching performance and DS(on) ruggedness. Max r = 247 m at V = -4.5 V, I = -1.9 A DS(on) GS D High performance trench technology for extremely low r DS(on) High power and current handling capability in a widely used surface mount package Applications Load Switch 100% UIL Tested Synchronous Rectifier RoHS Compliant D2 D2 G2 D2 4 5 D1 5 4 D1 D2 S2 6 Q2 3 6 3 G2 D1 7 2 G1 7 2 S2 Q1 G1 8 1 D1 8 1 S1 S1 Pin 1 SO-8 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -80 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous -2.1 I A D -Pulsed -10 E Single Pulse Avalanche Energy (Note 3) 37 mJ AS Power Dissipation T = 25 C (Note 1a) 3.1 A P W D Power Dissipation T = 25 C (Note 1b) 1.6 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 40 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 78 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS8935 FDS8935 SO-8 13 12 mm 2500 units 1 Publication Order Number: 2010 Semiconductor Components Industries, LLC. October-2017, Rev.3 FDS8935/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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