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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.TM FDU6N25 N-Channel UniFET MOSFET November 2013 FDU6N25 TM N-Channel UniFET MOSFET 250 V, 4.4 A, 1.1 Features Description TM R = 0.9 (Typ.) V = 10 V, I = 2.2 A UniFET MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 4.5 nC) This MOSFET is tailored to reduce on-state resistance, and to Low C (Typ. 5 pF) rss provide better switching performance and higher avalanche 100% Avalanche Tested energy strength. This device family is suitable for switching power converter applications such as power factor correction Applications (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. LCD/LED/PDP TV Consumer Appliances Lighting Uninterruptible Power Supply AC-DC Power Supply D G G D S I-PAK S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FDU6N25 Unit V Drain-Source Voltage 250 V DSS I Drain Current - Continuous (T = 25C) A 4.4 D C - Continuous (T = 100C) A 2.6 C (Note 1) I Drain Current - Pulsed 18 A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 12 mJ AS (Note 1) I Avalanche Current 4.4 A AR (Note 1) E Repetitive Avalanche Energy 5mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 50 W D C - Derate Above 25C 0.4 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics Symbol Parameter FDU6N25 Unit R Thermal Resistance, Junction-to-Case, Max. 2.5 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 110 C/W JA 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDU6N25 Rev. C1