DATA SHEET www.onsemi.com Digital FET, N-Channel D FDV301N, FDV301N-F169 General Description This N Channel logic level enhancement mode field effect transistor is produced using onsemis proprietary, high cell density, G S DMOS technology. This very high density process is especially tailored to minimize onstate resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one Nchannel FET can replace several different digital transistors, with SOT23 different bias resistor values. CASE 31808 Features 25 V, 0.22 A Continuous, 0.5 A Peak MARKING DIAGRAM R = 5 V = 2.7 V DS(on) GS R = 4 V = 4.5 V DS(on) GS &E&Y Very Low Level Gate Drive Requirements Allowing Direct 301&E&G Operation in 3 V Circuits. V < 1.06 V GS(th) GateSource Zener for ESD Ruggedness. > 6 kV Human Body Model &E = Designates Space Replace Multiple NPN Digital Transistors with One DMOS FET &Y = Binary Calendar Year This Device is PbFree and Halide Free Coding Scheme 301 = Specific Device Code Vcc &G = Date Code D ORDERING INFORMATION OUT Device Package Shipping FDV301N, SOT233 3000 / FDV301NF169 (PbFree, Tape & Reel IN G S HalideFree) GND For information on tape and reel specifications, Figure 1. Inverter Application including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: August, 2021 Rev. 8 FDV301N/DFDV301N, FDV301N F169 ABSOLUTE MAXIMUM RATINGS T = 25C unless otherwise noted. A Symbol Parameter FDV301N Unit V , V DrainSource Voltage, Power Supply Voltage 25 V DSS CC V , V GateSource Voltage, V 8 V GSS I IN I , I Drain/Output Current Continuous 0.22 A D O 0.5 P Maximum Power Dissipation 0.35 W D T , T Operating and Storage Temperature Range 55 to 150 C J STG ESD Electrostatic Discharge Rating MILSTD883D Human Body Model 6.0 kV (100 pF/1500 ) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS T = 25C unless otherwise noted. A Symbol Parameter Value Unit R Thermal Resistance, JunctiontoAmbient 357 C/W JA INVERTER ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted. A Symbol Parameter Test Conditions Min Typ Max Unit I Zero Input Voltage Output Current V = 20 V, V = 0 V 1 A O(off) CC I V Input Voltage V = 5 V, I = 10 A 0.5 V I(off) CC O V V = 0.3 V, I = 0.005 A 1 I(on) O O R Output to Ground Resistance V = 2.7 V, I = 0.2 A 4 5 O(on) I O Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted. A Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV DrainSource Breakdown Voltage V = 0 V, I = 250 A 25 V DSS GS D Breakdown Voltage Temp. Coefficient 25 mV/C BV / T I = 250 A, Referenced to 25C DSS J D I Zero Gate Voltage Drain Current V = 20 V, V = 0 V 1 A DSS DS GS V = 20 V, V = 0 V, T = 55C 10 DS GS J I Gate Body Leakage Current V = 8 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS V / T Gate Threshold Voltage Temp. I = 250 A, Referenced to 25C 2.1 mV/C GS(th) J D Coefficient V Gate Threshold Voltage V = V , I = 250 A 0.70 0.85 1.06 V GS(th) DS GS D R Static DrainSource OnResistance V = 2.7 V, I = 0.2 A 3.8 5 DS(on) GS D V = 2.7 V, I = 0.2 A, T = 125C 6.3 9 GS D J V = 4.5 V, I = 0.4 A 3.1 4 GS D I OnState Drain Current V = 2.7 V, V = 5 V 0.2 A D(on) GS DS g Forward Transconductance V = 5 V, I = 0.4 A 0.2 S FS DS D www.onsemi.com 2