Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. October 1997 FDV302P Digital FET, P-Channel General Description Features -25 V, -0.12 A continuous, -0.5 A Peak. This P-Channel logic level enhancement mode field effect R = 13 V = -2.7 V transistor is produced using Fairchild s proprietary, high cell DS(ON) GS density, DMOS technology. This very high density process is R = 10 V = -4.5 V. DS(ON) GS especially tailored to minimize on-state resistance. This Very low level gate drive requirements allowing direct device has been designed especially for low voltage operation in 3V circuits. V < 1.5V. applications as a replacement for digital transistors. Since GS(th) bias resistors are not required, this one P-channel FET can Gate-Source Zener for ESD ruggedness. replace several digital transistors with different bias resistors >6kV Human Body Model such as the DTCx and DCDx series. Compact industry standard SOT-23 surface mount package. Replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET. TM TM SuperSOT -8 SOIC-16 SOT-23 SuperSOT -6 SO-8 SOT-223 Mark:302 D G S o Absolute Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter FDV302P Units V Drain-Source Voltage -25 V DSS V Gate-Source Voltage -8 V GSS I Drain Current - Continuous -0.12 A D - Pulsed -0.5 P Maximum Power Dissipation 0.35 W D T ,T Operating and Storage Temperature Range -55 to 150 C J STG ESD Electrostatic Discharge Rating MIL-STD-883D 6.0 kV Human Body Model (100pf / 1500 Ohm) THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient 357 C/W JA 1997 Fairchild Semiconductor Corporation FDV302P REV. F