DATA SHEET www.onsemi.com MOSFET P-Channel, V R MAX I MAX DSS DS(ON) D Logic Level, POWERTRENCH 40 V 8.0 m 10 V 65 A -40 V, -65 A, 8.0 m D FDWS9509L-F085 Features G Typ R = 6.3 m at V = 10 V I = 65 A DS(on) GS D Typ Q = 48 nC at V = 10 V I = 65 A g(tot) GS D S UIS Capability PChannel MOSFET Wettable Flanks for Automatic Optical Inspection (AOI) AECQ101 Qualified and PPAP Capable Bottom Top D This Device is PbFree, Halogen Free/BFR Free and is RoHS D D D Compliant G Applications S S S Pin 1 Automotive Engine Control PowerTrain Management DFNW8 CASE 507AU Solenoid and Motor Drivers Electronic Steering Integrated Starter/Alternator MARKING DIAGRAM Distributed Power Architectures and VRM Primary Switch for 12 V Systems MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) J ON AYWWWL Parameter Symbol Value Unit FDWS DraintoSource Voltage V 40 V 9509L DSS GatetoSource Voltage V 16 V GS Continuous Drain Current T = 25C I 65 A C D (V = 10 V) (Note 1) GS A = Assembly Location Y = Year Pulsed Drain Current T = 25C See C WW = Work Week Figure 4 WL = Assembly Lot Single Pulse Avalanche Energy (Note 2) E 84 mJ AS FDWS9509L = Specific Device Code Power Dissipation P 107 W D Derate above 25C 0.71 W/C ORDERING INFORMATION Operating and Storage Temperature T , T 55 to C J STG +175 Device Package Shipping Thermal Resistance (JunctiontoCase) R 1.4 C/W DFNW8 JC FDWS9509LF085 3000 / (Power 56) Tape & Reel Maximum Thermal Resistance R 50 C/W JA (PbFree) (JunctiontoAmbient) (Note 3) For information on tape and reel specifications, Stresses exceeding those listed in the Maximum Ratings table may damage the including part orientation and tape sizes, please device. If any of these limits are exceeded, device functionality should not be refer to our Tape and Reel Packaging Specification assumed, damage may occur and reliability may be affected. Brochure, BRD8011/D. 1. Current is limited by wirebond configuration. 2. Starting Tj = 25C, L = 50 H, I = 56 A, V = 40 V during inductor charging AS DD and V = 0 V during time in avalanche. DD 3. R is the sum of the junction to case and case to ambient thermal JA resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by design while R JC JA is determined by the users board design. The maximum rating presented 2 here is based on mounting on a 1 in pad of 2 oz copper. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: October, 2021 Rev. 2 FDWS9509LF085/DFDWS9509L F085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Symbol Parameter Conditions Min Typ Max Unit OFF CHARACTERISTICS B DraintoSource Breakdown Voltage I = 250 A, V = 0 V 40 V VDSS D GS I DraintoSource Leakage Current V = 40 V, T = 25C 1 A DSS DS J V = 0 V GS T = 175C (Note 4) 1 mA J I GatetoSource Leakage Current V = 16 V 100 nA GSS GS ON CHARACTERISTICS V GatetoSource Threshold Voltage V = V , I = 250 A 1 1.7 3 V GS(th) GS DS D R DraintoSource OnResistance I = 65 A, V = 4.5 V 10.7 15.3 m DS(on) D GS I = 65 A T = 25C 6.3 8.0 m D J V = 10 V GS T = 175C (Note 4) 10.6 13.0 J DYNAMIC CHARACTERISTICS C Input Capacitance V = 20 V, V = 0 V, f = 1 MHz 3360 pF iss DS GS C Output Capacitance 1230 oss C Reverse Transfer Capacitance 38 rss R Gate Resistance V = 0.5 V, f = 1 MHz 21 g GS Q Total Gate Charge V = 0 to 10 V V = 20 V, 48 67 nC g(tot) GS DD I = 65 A D Q Threshold Gate Charge V = 0 to 2 V 7 g(th) GS Q GatetoSource Gate Charge 12 gs Q GatetoDrain Miller Charge 6 gd SWITCHING CHARACTERISTICS t TurnOn Time V = 20 V, I = 65 A, 22 ns on DD D V = 10 V, R = 6 GS GEN t TurnOn Delay 10 d(on) t Rise Time 5 r t TurnOff Delay 198 d(off) t Fall Time 71 f t TurnOff Time 405 off DRAINSOURCE DIODE CHARACTERISTICS V SourcetoDrain Diode Voltage I = 65 A, V = 0 V 1.0 1.25 V SD SD GS I = 32.5 A, V = 0 V 0.9 1.2 SD GS t Reverse Recovery Time I = 65 A, dI /dt = 100 A/ s 57 80 ns rr F SD Q Reverse Recovery Charge 45 67 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production J www.onsemi.com 2