Silicon Carbide Schottky Diode 650 V, 12 A FFSM1265A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, 5 Cathode 3, 4 Anode faster operating frequency, increased power density, reduced EMI, and 1, 2 Floating reduced system size and cost. Schottky Diode Features Max Junction Temperature 175C Pin 1 Avalanche Rated 79 mJ 5 High Surge Current Capacity 4 Positive Temperature Coefficient 3 2 Ease of Paralleling 1 No Reverse Recovery/No Forward Recovery PQFN4 8X8, 2P This Device is PbFree, Halogen Free/BFR Free and RoHS (Power88) Compliant CASE 483AP Applications General Purpose MARKING DIAGRAM SMPS, Solar Inverter, UPS Power Switching Circuits Y&Z&3&K FFSM 1265A Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSM1265A = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: December, 2019 Rev. 3 FFSM1265A/DFFSM1265A ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 79 mJ AS I Continuous Rectified Forward Current T < 137C 12 A F C Continuous Rectified Forward Current T < 135C 12.5 A C I Non-Repetitive Peak Forward Surge Current T = 25C, 10 s 700 A F, Max C 515 A T = 150C, 10 s C I Non-Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 63 A F,SM p I Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 31 A F,RM p Ptot Power Dissipation T = 25C 80 W C T = 150C 14 W C T , T Operating and Storage Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 79 mJ is based on starting T = 25C, L = 1 mH, I = 12.6 A, V = 50 V. AS J AS THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max 1.87 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min Typ Max Unit V Forward Voltage I = 12 A, T = 25C 1.5 1.75 V F F C I = 12 A, T = 125C 1.6 2.0 F C I = 12 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 200 A R R C V = 650 V, T = 125C 400 R C V = 650 V, T = 175C 600 R C Q Total Capacitive Charge V = 400 V 40 nC C C Total Capacitance V = 1 V, f = 100 kHz 665 pF R V = 200 V, f = 100 kHz 74 R V = 400 V, f = 100 kHz 54 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Shipping (Qty / Packing) FFSM1265A FFSM1265A PQFN4 8X8, 2P 13 13.3 mm 3000 / Tape & Reel (Power88) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2