Silicon Carbide Schottky Diode 650 V, 20 A FFSP2065B Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher www.onsemi.com reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent ELECTRICAL CONNECTION thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features Max Junction Temperature 175C 1. Cathode 2. Anode Avalanche Rated 94 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 2 Applications TO2202LD General Purpose CASE 340BB SMPS, Solar Inverter, UPS Power Switching Circuit MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 94 mJ AS Y&Z&3&K I Continuous Rectified Forward Current 20 A F FFSP T < 141C C 2065B Continuous Rectified Forward Current 22.5 T < 135C C I NonRepetitive T = 25C, 10 s 882 A F, Max C Peak Forward Y = ON Semiconductor Logo T = 150C, 10 s 798 Surge Current C &Z = Assembly Plant Code I NonRepetitive HalfSine Pulse, 84 A &3 = Numeric Date Code F, SM Forward t = 8.3 ms &K = Lot Code p Surge Current FFSP2065B = Specific Device Code P Power Dissipation T = 25C 150 W tot C T = 150C 25 C ORDERING INFORMATION T , T Operating and Storage Temperature 55 to +175 J STG C See detailed ordering and shipping information in the package Range dimensions section on page 2 of this data sheet. 1. E of 94 mJ is based on starting T = 25C, L = 0.5 mH, I = 19.4 A, V = 50 V. AS J AS Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: September, 2020 Rev. 1 FFSP2065B/DFFSP2065B THERMAL CHARACTERISTICS Symbol Parameter Unit Ratings C/W R Thermal Resistance, Junction to Case, Max. 1.0 JC PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFSP2065B TO220 Tube N/A N/A 50 Units FFSP2065B ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Unit V Forward Voltage I = 20 A, T = 25C 1.38 1.7 V F F C I = 20 A, T = 125C 1.6 2.0 F C I = 20 A, T = 175C 1.72 2.4 F C I Reverse Current A V = 650 V, T = 25C 0.5 40 R R C V = 650 V, T = 125C 1 80 R C V = 650 V, T = 175C 2 160 R C Q Total Capacitive Charge V = 400 V 51 nC C C Total Capacitance V = 1 V, f = 100 kHz 866 pF R V = 200 V, f = 100 kHz 80 R V = 400 V, f = 100 kHz 70 R www.onsemi.com 2