X-On Electronics has gained recognition as a prominent supplier of NRVBAF3200T3G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. NRVBAF3200T3G Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

NRVBAF3200T3G ON Semiconductor

NRVBAF3200T3G electronic component of ON Semiconductor
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Part No.NRVBAF3200T3G
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 200 V 3.0 A
Datasheet: NRVBAF3200T3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5000: USD 0.2188 ea
Line Total: USD 1094 
Availability - 0
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 5000
Multiples : 5000
5000 : USD 0.2188
10000 : USD 0.2064

0
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 1.8164
10 : USD 0.8609
100 : USD 0.468
500 : USD 0.3676

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0682
5 : USD 0.5096
25 : USD 0.4592
47 : USD 0.3444
129 : USD 0.3248

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NRVBAF3200T3G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NRVBAF3200T3G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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MBRAF3200, NRVBAF3200 Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlay www.onsemi.com contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. SCHOTTKY BARRIER RECTIFIER Features 3.0 AMPERE Small Compact Surface Mountable Package with JBend Leads 200 VOLTS Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very High Blocking Voltage 200 V 150C Operating Junction Temperature GuardRing for Stress Protection SMAFL NRVB Prefix for Automotive and Other Applications Requiring CASE 403AA Unique Site and Control Change Requirements AECQ101 STYLE 6 Qualified and PPAP Capable This is a PbFree Device MARKING DIAGRAM Mechanical Charactersistics RAC Case: Epoxy, Molded, Epoxy Meets UL 94, V0 AYWW Weight: 95 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal RAC = Specific Device Code Leads are Readily Solderable A = Assembly Location Lead and Mounting Surface Temperature for Soldering Purposes: Y = Year 260C Max. for 10 Seconds WW = Work Week = PbFree Package Cathode Polarity Band Device Meets MSL 1 Requirements ESD Ratings: Machine Model = A ORDERING INFORMATION ESD Ratings: Human Body Model = 1B Device Package Shipping MAXIMUM RATINGS MBRAF3200T3G SMAFL 5000 / Tape & Reel (PbFree) Rating Symbol Value Unit NRVBAF3200T3G SMAFL 5000 / Tape & Reel Peak Repetitive Reverse Voltage V 200 V RRM (PbFree) Working Peak Reverse Voltage V RWM DC Blocking Voltage V R For information on tape and reel specifications, including part orientation and tape sizes, please Average Rectified Forward Current I 3.0 A F(AV) refer to our Tape and Reel Packaging Specification (T = 100C) L Brochure, BRD8011/D. NonRepetitive Peak Surge Current I 100 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating Junction Temperature T 65 to +150 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: December, 2016 Rev. 3 MBRAF3200T3/DMBRAF3200, NRVBAF3200 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead (Note 1 R 25 C/W JL Thermal Resistance, JunctiontoAmbient (Note 1) R 90 JA 1. 1 inch square pad size (1 0.5 inch) for each lead on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) V V F (I = 3.0 A, T = 25C) 0.84 F J (I = 4.0 A, T = 25C) 0.86 F J (I = 3.0 A, T = 150C) 0.62 F J Maximum Instantaneous Reverse Current (Note 2) I R (Rated dc Voltage, T = 25C) 1.0 mA J (Rated dc Voltage, T = 150C) 6.0 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 100 100 T = 100C C T = 100C C T = 150C T = 25C T = 150C C C C 10 10 T = 25C C 1 1 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 V , INSTANTANEOUS VOLTAGE (V) V , INSTANTANEOUS VOLTAGE (V) F F Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E01 1.0E03 T = 150C C 1.0E04 1.0E02 T = 150C C 1.0E05 T = 100C C 1.0E03 1.0E06 T = 25C C 1.0E04 1.0E07 1.0E05 1.0E08 T = 25C C 1.0E09 1.0E06 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 V , REVERSE VOLTAGE (V) V , REVERSE VOLTAGE (V) R R Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current www.onsemi.com 2 I , REVERSE CURRENT (A) I , FORWARD CURRENT (A) R F I , MAXIMUM REVERSE CURRENT (A) R I , FORWARD CURRENT (A) F

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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