MBRAF3200, NRVBAF3200 Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlay www.onsemi.com contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. SCHOTTKY BARRIER RECTIFIER Features 3.0 AMPERE Small Compact Surface Mountable Package with JBend Leads 200 VOLTS Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very High Blocking Voltage 200 V 150C Operating Junction Temperature GuardRing for Stress Protection SMAFL NRVB Prefix for Automotive and Other Applications Requiring CASE 403AA Unique Site and Control Change Requirements AECQ101 STYLE 6 Qualified and PPAP Capable This is a PbFree Device MARKING DIAGRAM Mechanical Charactersistics RAC Case: Epoxy, Molded, Epoxy Meets UL 94, V0 AYWW Weight: 95 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal RAC = Specific Device Code Leads are Readily Solderable A = Assembly Location Lead and Mounting Surface Temperature for Soldering Purposes: Y = Year 260C Max. for 10 Seconds WW = Work Week = PbFree Package Cathode Polarity Band Device Meets MSL 1 Requirements ESD Ratings: Machine Model = A ORDERING INFORMATION ESD Ratings: Human Body Model = 1B Device Package Shipping MAXIMUM RATINGS MBRAF3200T3G SMAFL 5000 / Tape & Reel (PbFree) Rating Symbol Value Unit NRVBAF3200T3G SMAFL 5000 / Tape & Reel Peak Repetitive Reverse Voltage V 200 V RRM (PbFree) Working Peak Reverse Voltage V RWM DC Blocking Voltage V R For information on tape and reel specifications, including part orientation and tape sizes, please Average Rectified Forward Current I 3.0 A F(AV) refer to our Tape and Reel Packaging Specification (T = 100C) L Brochure, BRD8011/D. NonRepetitive Peak Surge Current I 100 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating Junction Temperature T 65 to +150 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: December, 2016 Rev. 3 MBRAF3200T3/DMBRAF3200, NRVBAF3200 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead (Note 1 R 25 C/W JL Thermal Resistance, JunctiontoAmbient (Note 1) R 90 JA 1. 1 inch square pad size (1 0.5 inch) for each lead on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) V V F (I = 3.0 A, T = 25C) 0.84 F J (I = 4.0 A, T = 25C) 0.86 F J (I = 3.0 A, T = 150C) 0.62 F J Maximum Instantaneous Reverse Current (Note 2) I R (Rated dc Voltage, T = 25C) 1.0 mA J (Rated dc Voltage, T = 150C) 6.0 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 100 100 T = 100C C T = 100C C T = 150C T = 25C T = 150C C C C 10 10 T = 25C C 1 1 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 V , INSTANTANEOUS VOLTAGE (V) V , INSTANTANEOUS VOLTAGE (V) F F Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E01 1.0E03 T = 150C C 1.0E04 1.0E02 T = 150C C 1.0E05 T = 100C C 1.0E03 1.0E06 T = 25C C 1.0E04 1.0E07 1.0E05 1.0E08 T = 25C C 1.0E09 1.0E06 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 V , REVERSE VOLTAGE (V) V , REVERSE VOLTAGE (V) R R Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current www.onsemi.com 2 I , REVERSE CURRENT (A) I , FORWARD CURRENT (A) R F I , MAXIMUM REVERSE CURRENT (A) R I , FORWARD CURRENT (A) F