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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.FGA180N33AT 330V, 180A PDP Trench IGBT
April 2008
FGA180N33AT
tm
330V, 180A PDP Trench IGBT
Features General Description
High Current Capability Using Novel Trench IGBT Technology, Fairchilds new series of
trench IGBTs offer the optimum performance for PDP applica-
Low saturation voltage: V =1.03V @ I = 40A
CE(sat) C
tions where low conduction and switching losses are essential.
High input impedance
RoHS compliant
Applications
PDP SYSTEM
C
G
TO-3P
GEC
E
Absolute Maximum Ratings
Symbol Description Ratings Units
V Collector to Emitter Voltage 330 V
CES
V Gate to Emitter Voltage 30 V
GES
o
Collector Current @ T = 25 C 180 A
C
I
C
o
I Pulsed Collector Current 450 A
C pulse (1) @ T = 25 C
C
o
Maximum Power Dissipation @ T = 25 C 390 W
C
P
D
o
Maximum Power Dissipation @ T = 100 C 156 W
C
o
T Operating Junction Temperature -55 to +150 C
J
o
T Storage Temperature Range -55 to +150 C
stg
Maximum Lead Temp. for soldering
o
T
300 C
L
Purposes, 1/8 from case for 5 seconds
Notes:
1: Repetitive test, pulse width = 100usec, Duty = 0.1
* I pulse limited by max Tj
C_
Thermal Characteristics
Symbol Parameter Typ. Max. Units
o
R (IGBT) Thermal Resistance, Junction to Case - 0.32 C/W
JC
o
R Thermal Resistance, Junction to Ambient - 40 C/W
JA
2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGA180N33AT Rev. A