FGD3325G2-F085 EcoSPARK 2 330mJ, 250V, N-Channel Ignition IGBT FGD3325G2 -F085 EcoSPARK 2 330mJ, 250V, N-Channel Ignition IGBT Features Applications o SCIS Energy = 330mJ at T = 25 C Automotive lgnition Coil Driver Circuits J Logic Level Gate Drive Coil On Plug Applications Qualified to AEC Q101 RoHS Compliant Package GATE EMITTER COLLECTOR JEDEC TO-252 D-Pak Publication Order Number: 2015 Semiconductor Components Industries, LLC. August-2017, Rev. 2 FGD3325G2-F085/D FGD3325G2-F085 EcoSPARK 2 330mJ, 250V, N-Channel Ignition IGBT Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units BV Collector to Emitter Breakdown Voltage (I = 1mA) 250 V CER C BV Emitter to Collector Voltage - Reverse Battery Condition (I = 10mA) 28 V ECS C E I = 14.8A, L = 3.0mHy, R = 1K T = 25C 330 mJ SCIS25 SCIS GE C E I = 11.4A, L = 3.0mHy, R = 1K T = 150C 195 mJ SCIS150 SCIS GE C I Collector Current Continuous, at V = 5.0V, T = 25C 41 A C25 GE C I Collector Current Continuous, at V = 5.0V, T = 110C 25 A C110 GE C V Gate to Emitter Voltage Continuous 10 V GEM Power Dissipation Total, at T = 25C T = 25C 150 W C C P D o o Power Dissipation Derating, for T > 25CT > 25C 1.0 W/ C C C o T Operating Junction Temperature Range -55 to +175 C J o T Storage Junction Temperature Range -55 to +175 C STG o T Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 C L o T Reflow soldering according to JESD020C 260 C PKG HBM-Electrostatic Discharge Voltage at100pF, 1500 4kV ESD CDM-Electrostatic Discharge Voltage at 1 2kV Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGD3325G2 FGD3325G2 -F085 TO252 330mm 16mm 2500 units Electrical Characteristics T = 25C unless otherwise noted A Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics I = 2mA, V = 0, CE GE BV Collector to Emitter Breakdown Voltage R = 1K , 225 - 275 V CER GE o T = -40 to 150 C J I = 10mA, V = 0V, CE GE BV Collector to Emitter Breakdown Voltage R = 0, 240 - 290 V CES GE o T = -40 to 150 C J I = -75mA, V = 0V, CE GE BV Emitter to Collector Breakdown Voltage 28 - - V ECS T = 25C J BV Gate to Emitter Breakdown Voltage I = 2mA 12 14 - V GES GES o T = 25C- - 25 A V = 175V, R = 1K J CE GE I Collector to Emitter Leakage Current CER o T = 150C- - 1 mA J o T = 25 C - - 1 V = 24V, J EC I Emitter to Collector Leakage Current mA ECS o T = 150C- - 40 J R Series Gate Resistance - 120 - 1 R Gate to Emitter Resistance 10K - 30K 2 On State Characteristics o V Collector to Emitter Saturation Voltage I = 6A, V = 4V, T = 25 C - 1.15 1.25 V CE(SAT) CE GE J o V Collector to Emitter Saturation Voltage I = 10A, V = 4.5V, T = 150 C - 1.35 1.50 V CE(SAT) CE GE J o V Collector to Emitter Saturation Voltage I = 15A, V = 4.5V, T = 150 C - 1.68 1.85 V CE(SAT) CE GE J www.onsemi.com 2