FGB3440G2-F085 / FGD3440G2-F085 / FGP3440G2-F085
FGB3440G2 -F085 / FGD3440G2 -F085
FGP3440G2 -F085
EcoSPARK 2 335mJ, 400V, N-Channel Ignition IGBT
Features Applications
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SCIS Energy = 335mJ at T = 25 C Automotive lgnition Coil Driver Circuits
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Logic Level Gate Drive Coil On Plug Applications
Qualified to AEC Q101
RoHS Compliant
Package
Symbol
JEDEC TO-263AB JEDEC TO-220AB
E
D-Pak
C
G
COLLECTOR
G
E
R
1
GATE
JEDEC TO-252AA
R
D-Pak
2
G
EMITTER
COLLECTOR
E
(FLANGE)
Device Maximum Ratings T = 25C unless otherwise noted
A
Symbol Parameter Ratings Units
BV Collector to Emitter Breakdown Voltage (I = 1mA) 400 V
CER C
BV Emitter to Collector Voltage - Reverse Battery Condition (I = 10mA) 28 V
ECS C
E Self Clamping Inductive Switching Energy (Note 1) 335 mJ
SCIS25
E Self Clamping Inductive Switching Energy (Note 2) 195 mJ
SCIS150
I Collector Current Continuous, at V = 4.0V, T = 25C 26.9 A
C25 GE C
I Collector Current Continuous, at V = 4.0V, T = 110C 25 A
C110 GE C
V Gate to Emitter Voltage Continuous 10 V
GEM
Power Dissipation Total, at T = 25C 166 W
C
P
D
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Power Dissipation Derating, for T > 25C1.1W/ C
C
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T Operating Junction Temperature Range -40 to +175 C
J
o
T Storage Junction Temperature Range -40 to +175 C
STG
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T Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 C
L
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T Max. Lead Temp. for Soldering (Package Body for 10s) 260 C
PKG
ESD Electrostatic Discharge Voltage at100pF, 1500 4kV
Publication Order Number:
@2014 Semiconductor Components Industries, LLC.
FGB3440G2-F085/D
August-2017, Rev.3FFGB3440G2-F085 / FGD3440G2-F085 / FGP3440G2-F085
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
330mm
FGB3440G2 FGB3440G2 -F085 TO-263AB 24mm 800
TO-252AA 330mm
FGD3440G2 FGD3440G2 -F085 16mm 2500
TO-220AB Tube N/A 50
FGP3440G2 -F085
FGP3440G2
Electrical Characteristics T = 25C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
I = 2mA, V = 0,
CE GE
BV Collector to Emitter Breakdown Voltage R = 1K, 370 400 430 V
CER GE
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T = -40 to 150 C
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I = 10mA, V = 0V,
CE GE
BV Collector to Emitter Breakdown Voltage R = 0, 390 420 450 V
CES GE
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T = -40 to 150 C
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I = -20mA, V = 0V,
CE GE
BV Emitter to Collector Breakdown Voltage 28 - - V
ECS
T = 25C
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BV Gate to Emitter Breakdown Voltage I = 2mA 12 14 - V
GES GES
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T = 25C- - 25 A
V = 250V, R =1K
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CE GE
I Collector to Emitter Leakage Current
CER o
T = 150C- - 1 mA
J
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T = 25 C - - 1
V = 24V,
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EC
I Emitter to Collector Leakage Current mA
ECS o
T = 150C- - 40
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R Series Gate Resistance - 120 -
1
R Gate to Emitter Resistance 10K - 30K
2
On State Characteristics
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V Collector to Emitter Saturation Voltage I = 6A, V = 4V, T = 25 C - 1.1 1.2 V
CE(SAT) CE GE J
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V Collector to Emitter Saturation Voltage I = 10A, V = 4.5V, T = 150C- 1.31.45V
CE(SAT) CE GE J
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V Collector to Emitter Saturation Voltage I = 15A, V = 4.5V, T = 150C- 1.61.75V
CE(SAT) CE GE J
L = 3.0 mHy, VGE = 5V
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E Self Clamped Inductive Switching TJ = 25 C - - 335 mJ
SCIS
RG = 1K , (Note 1)
Notes:
1: Self Clamping Inductive Switching Energy(ESCIS25) of 335mJ is based on the test conditions that is starting
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T =25 C; L=3mHy, I =15A,V =100V during inductor charging and V =0V during the time in clamp .
J SCIS CC CC
2: Self Clamping Inductive Switching Energy (ESCIS150) of 195mJ is based on the test conditions that is starting
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T =150 C; L=3mHy, ISCIS=11.4A,VCC=100V during inductor charging and VCC=0V during the time in clamp.
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