Product Information

FGH40N60SMDF-F085

FGH40N60SMDF-F085 electronic component of ON Semiconductor

Datasheet
Trans IGBT Chip N-CH 600V 80A Automotive Rail
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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FGH40N60SMDF-F085
ON Semiconductor

1 : USD 5.1175
10 : USD 3.6059
25 : USD 3.2479
100 : USD 3.183
500 : USD 3.183
1000 : USD 3.183
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

FGH40N60SMDF-F085
ON Semiconductor

1 : USD 7.7132
10 : USD 5.0599
25 : USD 4.8354
100 : USD 4.2633
450 : USD 3.7136
900 : USD 3.4219
2700 : USD 3.3209
N/A

Obsolete
0 - WHS 3

MOQ : 450
Multiples : 450

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FGH40N60SMDF-F085
ON Semiconductor

450 : USD 3.2005
N/A

Obsolete
0 - WHS 4

MOQ : 450
Multiples : 450

Stock Image

FGH40N60SMDF-F085
ON Semiconductor

450 : USD 3.0742
N/A

Obsolete

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Additional Infomation About Product

IGBT - Field Stop 600 V, 40 A FGH40N60SMDF-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor new series of Field Stop IGBTs offer the optimum performance www.onsemi.com for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. V I CES C Features 600 V 40 A Max Junction Temperature T = 175C J C Positive Temperature Coefficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: V = 1.7 V (Typ.) I = 40 A CE(sat) C High Input Impedance G Fast Switching : E = 6.25 uJ/A OFF Tighten Parameter Distribution E1 Qualified to Automotive Requirements of AECQ101 E This Device is PbFree and is RoHS Compliant C G Applications Automotive Chargers, Converters, High Voltage Auxiliaries COLLECTOR Inverters, PFC, UPS (FLANGE) TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FGH40N60 SMDF Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH40N60SMDF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2020 Rev. 3 FGH40N60SMDFF085/DFGH40N60SMDF F085 ABSOLUTE MAXIMUM RATINGS Symbol Description Ratings Unit V Collector to Emitter Voltage 600 V CES V Gate to Emitter Voltage 20 V GES I Collector Current T = 25C 80 A C C T = 100C 40 A C I (Note 1) Pulsed Collector Current T = 25C 120 A CM C P Maximum Power Dissipation T = 25C 349 W D C T = 100C 174 W C T Operating Junction Temperature 55 to +175 C J T Storage Temperature Range 55 to +175 C STG T Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter Typ. Unit R (IGBT) Thermal Resistance, Junction to Case 0.43 C/W JC R (Diode) Thermal Resistance, Junction to Case 1.45 C/W JC R Thermal Resistance, Junction to Ambient 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Packing Method Part Number Top Mark Package Reel Size Tape Width Qty per Tube FGH40N60SMDFF085 FGH40N60SMDF TO247 Tube N/A N/A 30 www.onsemi.com 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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